Abstract. This paper is dedicated to the experimental investigation of Ohmic contacts to the n + -doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.4·10 -6 Ω·cm 2 was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.
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