Low resistance spin-dependent tunneling junctions with naturally oxidized tunneling barrier

Sin, Kyusik; Chien, C.; Miloslavsky, L.; Funada, S.; Miller, Michael M.; Tong, Ho‐Ming; Gupta, Subhadra

doi:10.1109/20.908599

Cited by 13 publications

(5 citation statements)

References 9 publications

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“…The current-voltage (I -V ) characteristics of the devices were measured using a probe station with a HP 4156A semiconductor parameter analyser. The surface of the Al film was expected to oxidize during the ozone treatment, resulting in an oxide layer comparable to that observed by prolonged air exposure (6-16 Å) [28]. Since the overall film was 140 nm thick, the contact-to-nanowire interface was expected to be unoxidized, so the primary effect on contact properties was expected to be somewhat increased difficulty in breaking through the surface oxide with the probe pads.…”

Section: Fabrication and Experimental Detailsmentioning

confidence: 99%

High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

Lee

Yoon

et al. 2007

Nanotechnology

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., "High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment" (2007 Abstract High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a nanoscopic self-assembled organic gate insulator and characterized in terms of conventional device performance metrics. To optimize device performance and understand the effects of interface properties, devices were fabricated with both Al and Au/Ti source/drain contacts, and device electrical properties were characterized following annealing and ozone treatment. Ozone-treated single ZnO NW-FETs with Al contacts exhibited an on-current (I on ) of ∼4 μA at 0.9 V gs and 1.0 V ds , a threshold voltage (V th ) of 0.2 V, a subthreshold slope (S) of ∼130 mV/decade, an on-off current ratio (I on :I off ) of ∼10 7 , and a field effect mobility (μ eff ) of ∼1175 cm 2 V −1 s −1 . In addition, ozone-treated ZnO NW-FETs consistently retained the enhanced device performance metrics after SiO 2 passivation. A 2D device simulation was performed to explain the enhanced device performance in terms of changes in interfacial trap and fixed charge densities.

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Section: Fabrication and Experimental Detailsmentioning

confidence: 99%

High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

Lee

Yoon

et al. 2007

Nanotechnology

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“…The advantage for the use of Al 2 O 3 as barrier layer is that Al 2 O 3 is a very dense oxide and the oxygen bonding energy in Al 2 O 3 is relatively high (N3 eV). In previous works, the Al 2 O 3 barrier layer was formed by natural and plasma oxidation [8][9][10]. In our work, we use room temperature oxidation under a molecular O 2 flux.…”

Section: Introductionmentioning

confidence: 99%

Growth of magnetic tunnel junctions on Si(001) substrates

Mendez¹,

Thanh²,

Ozerov³

et al. 2007

Thin Solid Films

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“…[6][7][8][9][10][11][12][13][14][15] Due to different H c and high saturation magnetization, the NiFe and CoFe FM alloy layers have been extensively used in MTJs. 3,[16][17][18] However, in all these reports, amorphous Al 2 O 3 has been used as the tunnel barrier. It is known that the choice of spacer layer, its crystalline quality, and its roughness with the two adjoining FM layers is critical to the overall magnetotransport behaviour of MTJs.…”

Section: Introductionmentioning

confidence: 99%

Effect of MgO spacer and annealing on interface and magnetic properties of ion beam sputtered NiFe/Mg/MgO/CoFe layer structures

Singh

Chaudhary

2012

Journal of Applied Physics

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Ferroelectric vs. structural properties of large-distance sputtered epitaxial LSMO/PZT heterostructures AIP Advances 2, 032184 (2012) Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications J. Appl. Phys. 112, 063114 (2012) Reactive sputter deposition of pyrite structure transition metal disulfide thin films: Microstructure, transport, and magnetism J. Appl. Phys. 112, 054328 (2012) Strong free-carrier electro-optic response of sputtered ZnO films J. Appl. Phys. 112, 053514 (2012) Influence of capping layers on CoFeB anisotropy and dampingThe effect of variation in the thickness of ion assisted ion beam sputtered MgO spacer layer deposited at oxygen ion assisted energy of 50 eV on the extent of magnetic coupling of NiFe and CoFe layers in Si/NiFe(10 nm)/Mg(1 nm)/MgO(2,4,6 nm)/CoFe(10 nm) sandwich structure is investigated. At MgO spacer layer thickness of 4 nm, the separate reversal of magnetizations of the two ferromagnetic layers is observed in the hystresis loop recorded along easy direction. This results in a 3.5 Oe wide plateau like region during magnetization reversal, which became 4.5 Oe at 6 nm thin MgO. At 2 nm thin MgO, the absence of plateau during magnetization reversal region revealed ferromagnetic coupling between the two ferromagnetic layers, which is understood to arise due to the growth of very thin and low density (1.22 gm/cc) MgO spacer layer, indicating the presence of pinholes as revealed by x-ray reflectometry. After vaccum annealing (200 C/1 h), the plateau region for 4 and 6 nm thin MgO case decreased to 1.5 Oe and 2.0 Oe, respectively, due to enhanced interface roughness/mixing. In addition, an enhancement of the in-plane magnetic anisotropy is also observed.

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Low resistance spin-dependent tunneling junctions with naturally oxidized tunneling barrier

Cited by 13 publications

References 9 publications

High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

Growth of magnetic tunnel junctions on Si(001) substrates

Effect of MgO spacer and annealing on interface and magnetic properties of ion beam sputtered NiFe/Mg/MgO/CoFe layer structures

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