High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

Abstract

., "High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment" (2007 Abstract High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a nanoscopic self-assembled organic gate insulator and characterized in terms of conventional device performance metrics. To optimize device performance and understand the effects of interface properties, devices were fabricated with both Al and Au/Ti source/drain contacts, and device electrical properties were characterized following annealing and ozone treatment. Ozone-treated single ZnO NW-FETs with Al contacts exhibited an on-current (I on ) of ∼4 μA at 0.9 V gs and 1.0 V ds , a threshold voltage (V th ) of 0.2 V, a subthreshold slope (S) of ∼130 mV/decade, an on-off current ratio (I on :I off ) of ∼10 7 , and a field effect mobility (μ eff ) of ∼1175 cm 2 V −1 s −1 . In addition, ozone-treated ZnO NW-FETs consistently retained the enhanced device performance metrics after SiO 2 passivation. A 2D device simulation was performed to explain the enhanced device performance in terms of changes in interfacial trap and fixed charge densities.

Electric double-layer transistors: a review of recent progress

“…Afterward, Yanagi et al fabricated the Fig. 26 Schematic comparison of black phosphorus transistor [154] with other different transistors [30,31,[160][161][162][163][164][165][166][167][168][169][170].…”

1∕f noise of SnO2 nanowire transistors

“…1; the representative device reported in this study contains a single SnO 2 NW. The spacing between Al source and drain electrodes is ϳ1.5 m. To optimize the transistor characteristics, in terms of on-current, threshold voltage, subthreshold slope and on-off ratio, 13 an ozone treatment ͑2 min͒ was performed after deposition and patterning a͒ Author to whom correspondence should be addressed. of the source-drain contacts, modifying the unmetallized surfaces of the nanowires.…”

Introduction to Solution‐Deposited Inorganic Electronics

“…Another promising approach to achieve low -temperature, yet high -quality, gate oxides is the development of solution -deposited, self -assembled nanodielectrics. 59,60 These dielectrics can be solution -deposited at thicknesses of 15 nm or less. The resultant fi lms have leakage currents of less than 10 -8 A/cm 2 and breakdown voltages of 6 -7 MV/cm.…”