Low-resistance p-Si drift detectors

Muminov, R. A.; Dzhuraev, U. B.; Radzhapov, S. A.; Iskanderov, A. Sh.

doi:10.1007/bf01125267

Cited by 3 publications

(3 citation statements)

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“…In [ 31 ], the conventional, one-sided drift technology, for large-sized detectors with a thickness of 3 mm, was reported. Table 1 describes experimental data of double-sided drift technology.…”

Section: Electrical Characteristics Of the Si(li) P-i-n Structurementioning

confidence: 99%

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Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

et al. 2021

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In this paper, we described a method of double-sided diffusion and drift of lithium-ions into monocrystalline silicon for the formation of the large-sized, p-i-n structured Si(Li) radiation detectors. The p-i-n structure is a p-n junction with a doped region, where the “i-region” is between the n and the p layers. A well-defined i-region is usually associated with p or n layers with high resistivities. The p-i-n structure is mostly used in diodes and in some types of semiconductor radiation detectors. The uniqueness of this method is that, in this method, the processes of diffusion and drift of lithium-ions, which are the main processes in the formation of Si(Li) p-i-n structures, are produced from both flat sides of cylindrical-shaped monocrystalline silicon, at optimal temperature (T = 420 °C) conditions of diffusion, and subsequently, with synchronous supply of temperature (from 55 to 100 °C) and reverse bias voltage (from 70 to 300 V) during drift of lithium-ions into silicon. Thus, shortening the manufacturing time of the detector and providing a more uniform distribution of lithium-ions in the crystal volume. Since, at present, the development of manufacturing of large-sized Si(Li) detectors is hindered due to difficulties in obtaining a uniformly compensated large area and time-consuming manufacturing process, the proposed method may open up new possibilities in detector manufacturing.

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Section: Electrical Characteristics Of the Si(li) P-i-n Structurementioning

confidence: 99%

“…Table 1 describes experimental data of double-sided drift technology. As can be seen from Table 1 , in the proposed method, the drift time is considerably shorter than in [ 31 ], when months of work are taken to obtain a structure with a thickness W ≥ 4 mm.…”

Section: Electrical Characteristics Of the Si(li) P-i-n Structurementioning

confidence: 99%

Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

et al. 2021

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“…In order to refine the low-background facilities based on large-area semiconductor detectors [1], we developed a new type of detecting module [2,3] composed of two (main and guard) p -i -n -Si(Li) detectors, produced on a common large-diameter single crystal of silicon. A schematic diagram of this module is shown in Figs.…”

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A low-background ?-ray spectrometer facility with composite detecting modules

2005

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In order to refine the low-background facilities based on large-area semiconductor detectors [1], we developed a new type of detecting module [2, 3] composed of two (main and guard) p -i -n -Si(Li) detectors, produced on a common large-diameter single crystal of silicon. A schematic diagram of this module is shown in Figs. 1a and 1b. The distinctive feature of its diffusiondrift phase is that the lithium ions, instead of penetrating through the thickness of the crystal, drift to a strictly determined depth dictated by the conditions of the physical problem being solved.It should be noted that, in this case, the requirements for the thickness of the diffusion n + regions (entrance windows) are particularly stringent. On the one hand, they must ensure a sufficiently high detection efficiency for β rays (i.e., be thin), and on the other, they should provide high quality electrical and mechanical contact. The high electrical conductivity of the residual p region used as a common negative contact for both the main and guard detectors is ensured by the low resistance of the raw silicon, which imparts the required contact properties to this region.Two p -i -n -Si(Li) detectors were made in a common silicon single crystal with an area of 25 cm 2 and a thickness of the active region w i = 1.5 mm. At U rev ≈ 20-30 V, the detectors had dark current I ≈ 1-2 µ A, capacitance ë ≈ 180-200 nF, and noise energy E noise = 25-30 keV. Figure 2 presents β -ray spectra of 207 Bi with peaks corresponding to energies = 976 keV and = 1050 keV. The energy resolution and the pulse height of detector D 1 are slightly lower than those of detector D 2 . This is evidently caused by the thicker diffusion n + region (the "dead" layer of the entrance window) of detector D 1 . This difference in thickness of n + regions is attributable to the nonsimultaneous sputtering of Li onto the end surfaces of the crystal during the diffusion phase.It should be mentioned that the separation of D 1 and D 2 into the main and guard detectors is a matter of convention. The identity of their physical and geometric properties allows them to be considered as identical units, both capable of detecting nuclear radiation and cosmic rays and measuring their spectra over wide spatial angles.Abstract -The features of twin pin Si(Li) detectors produced on a common large-diameter silicon single crystal are described. The intrinsic noise of the facility is suppressed by reducing the relative proportion of the structural materials (casings, insulating compounds, metal contacts, etc.). (b) (a) 5 3 2 4 i p -Si i D 1 D 2 + -+ 3 4 2 1 1 Fig. 1. (a) Cross section of a semiconductor detector: ( 1 ) diffusion region; ( 2 ) compensated region; ( 3 ) p -Si layer; ( 4 ) ùäãÅ-10Å insulating epoxide compound; ( 5 ) organic glass case; and ( D 1 , D 2 ) detectors. (b) Overall view of the head stage of the low-background facility containing two Si(Li) detectors with a working surface of 25 cm 2 :( 1 ) cassette for a β -radioactive sample;( 2 ) semiconductor detector;( 3 ) common organic-g...

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