Low-Resistance Integrated Toroidal Inductor for Power Management

Orlando, B.; Hida, R.; Cuchet, R.; Audoin, M.; Viala, B.; Pellissier-Tanon, D.; Gagnard, X.; Ancey, P.

doi:10.1109/tmag.2006.879571

Cited by 52 publications

(29 citation statements)

References 3 publications

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“…For inductors used in power conversion, the inductor excitation current waveform will typically have a considerable dc component. Thus the inductor dc resistance, R dc , is also an important factor and some works [9] have identified the ratio of inductance, L, to dc resistance as a measure for good power inductor performance.…”

Section: Inductor Designmentioning

confidence: 99%

“…Notable examples of this work include the work of Nakazawa et al [5] which demonstrated the direct integration of a micro-inductor on top of an active circuit. Orlando et al [9] demonstrated a microfabricated inductor with the highest reported inductance to dc resistance ratio and Prabhakaran et al demonstrated low value (several nH) micro-inductors with high current handling capability (up to 10 A).…”

Section: Introductionmentioning

confidence: 99%

“…The cost of the final micro-fabricated devices is related to the number of steps used in the fabrication and the substrate area occupied by a device. For example in [9] the high inductance to dc resistance was achieved in a relatively large area of 5.6 x 5.6 mm 2 and with a relatively complex process. The fully integrated device reported in [5] was made with a sputter deposited 9 µm thick layer of magnetic material, which may not be cost effective in practice.…”

Section: Introductionmentioning

confidence: 99%

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Microfabricated inductors for 20 MHz Dc-Dc converters

O’Donnell¹,

Wang²,

Meere³

et al. 2008

2008 Twenty-Third Annual IEEE Applied Power Electronics Conference and Exposition

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Abstract-This paper presents the design and measured results for micro-fabricated inductors suitable for use in high frequency (> 10 MHz), low power (1 -2 W) dc-dc converters. The design has focused on maximizing inductor efficiency for a given converter specification. Inductors in the range of 100 nH to 300 nH have been fabricated and tested. The small signal measurements show a relatively flat inductance profile, with a 10% drop in inductance at 30 MHz. Inductance vs. dc bias current measurements show less than 15% decrease in inductance at 500 mA current. The performance of the micro-inductors have also been compared to a conventional wire-wound inductor in a 20 MHz dc-dc converter. The converter efficiency is shown to be approximately 4% lower when the micro-inductor is used compared to the when the wirewound inductor is used. The peak efficiency of the micro-inductor in the converter is estimated to be approximately 93%.

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Section: Inductor Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Microfabricated inductors for 20 MHz Dc-Dc converters

O’Donnell¹,

Wang²,

Meere³

et al. 2008

2008 Twenty-Third Annual IEEE Applied Power Electronics Conference and Exposition

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“…From the more simple ones using a planar spiral [46]- [49], to toroids [50], [51], and also using magnetic films to reduce the required size of the inductors [8], [19]. The main concern is the achievable Q values -the relation between its inductive value, frequency and resistive value.…”

Section: E Inductorsmentioning

confidence: 99%

“…This limits the self-resonance significantly [52]. The toroidal designs presented in [50], [51] although producing promising results on the Q values of the inductors, as high as 50, the frequencies of these technologies are also currently limited around 10 MHz [8].…”

Section: E Inductorsmentioning

confidence: 99%

Integrated Very-High-Frequency Switch Mode Power Supplies: Design Considerations

Hertel

Nour

Knott

2018

IEEE J. Emerg. Sel. Topics Power Electron.

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Abstract-This paper presents a power supply using an increased switching frequency to minimize the size of energy storing components, thereby addressing the demands for increased power densities in power supplies. 100 MHz and higher switching frequencies have been used in resonant power converters, which along with the possible integration of passive components on silicon wafer, present a beneficial solution in applications such as mobile phones. This paper presents a design for a 9 W class E resonant power converter in an 0.18 µm CMOS process. The converter is driven by a self oscillating gate drive, which is presented in an in-depth mathematical analysis. The gate resistance of the designed transistors is of critical importance in order to achieve the correct phase shift required for zero-voltageswitching. The Z-parameter method is used to characterize the transistors which is verified through simulations. The required spiral inductors was modeled, and simulations show Q values of as high as 14 at a switching frequency of 250 MHz. Simulations of the converter show an efficiency of 55 % with a self oscillating gate drive. However the modeled inductor was not adequate for operating with the self oscillating gate drive, presenting a future challenge for power supplies on chip.

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2016

Power Systems‐On‐Chip

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Low-Resistance Integrated Toroidal Inductor for Power Management

Cited by 52 publications

References 3 publications

Microfabricated inductors for 20 MHz Dc-Dc converters

Microfabricated inductors for 20 MHz Dc-Dc converters

Integrated Very-High-Frequency Switch Mode Power Supplies: Design Considerations

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