Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer

Chai, Yang; Hazeghi, Arash; Takei, Kuniharu; Chen, Hongyu; Chan, P.C.H.; Javey, Ali; Wong, Hiu Yung

doi:10.1109/ted.2011.2170216

Cited by 105 publications

(76 citation statements)

References 40 publications

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“…In particular, CNTs showing optimal charge transport properties are promising candidates for replacing copper interconnects in nanoelectronics circuits provided that the Schottky barrier that forms at the interface between the CNT surface and the electrical contact can be engineered [6]. Reports on both semiconducting and metallic CNT devices show the influence of the CNT surface chemistry on the contact resistance [7,8]. Electrical contacts to CNTs have been fabricated with different metals and disparities in the resistance have been associated to the presence of oxygen at the CNT surface [9,10].…”

Section: Introductionmentioning

confidence: 99%

Platinum and palladium on carbon nanotubes: Experimental and theoretical studies

Adjizian¹,

Marco²,

Suarez-Martinez³

et al. 2013

Chemical Physics Letters

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Section: Introductionmentioning

confidence: 99%

Platinum and palladium on carbon nanotubes: Experimental and theoretical studies

Adjizian¹,

Marco²,

Suarez-Martinez³

et al. 2013

Chemical Physics Letters

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“…How-ever, this resistance is hard to achieve because of the poor wetting properties of metal to CNTs and the presence of Schottky barriers (SBs) between the CNT and the metal due to band misalignment. Solutions include the use of graphitic carbon interfacial layers to increase the contact area between the metal and the CNT [29] and the selection of a proper work-function metal contact [30] to reduce the SB. …”

Section: Manufacturing Imperfections In Cnfets and Challengesmentioning

confidence: 99%

Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections

Almudéver

Rubio

2015

Microelectronics Reliability

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Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon transistors. Boasting extraordinary electronic properties, CNFETs exhibit characteristics rivaling those of state-of-the-art Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). However, as any technology that is in development, CNFET fabrication process still have some imperfections that results in carbon nanotube variations, which can have a severe impact on the devices' performance and jeopardize their reliability (in this work the term reliability means time-zero failure due to manufacturing variations). This paper presents a study of the effects on transistors of the main CNFET manufacturing imperfections, including the presence of metallic carbon nanotubes (m-CNTs), imperfect m-CNT removal processes, chirality drift, CNT doping variations in the source/drain extension regions, and density fluctuations due to non-uniform inter-CNT spacing.

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“…17 The Schottky barrier height depends on distinct metal. 18 Pd, Gold, copper, aluminum, and titanium metal were patterned using photolithography together with electron beam lithography. The contact was aligned through DEP force 19 for CNT, followed by medium temperature annealing.…”

Section: Carbon Nanotube Photodetectormentioning

confidence: 99%

Infrared light field imaging using single carbon nanotube detector

Chen

Zhou

et al. 2014

SPIE Proceedings

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The conventional photographs only record the sum total of light rays of each point on image plane so that they tell little about the amount of light traveling along individual rays. The focus and lens aberration problems have challenged photographers since the very beginning therefore light field photography was proposed to solve these problems. Lens array and multiple camera systems are used to capture 4D light rays, by reordering the different views of scene from multiple directions. The coded aperture is another method to encode the angular information in frequency domain.However, infrared light field sensing is still widely opening to research. In the paper, we will propose micro plane mirror optics together with compressive sensing algorithm to record light field in infrared spectrum. The micro mirror reflects objects irradiation and forms a virtual image behind the plane in which the mirror lies. The Digital Micromirror (DMD) consists of millions microscale mirrors which work as CCD array in the camera and it is controlled separately so as to project linear combination of object image onto lens. Coded aperture could be utilized to control angular resolution of infrared light rays. The carbon nanotube based infrared detector, which has ultra high signal to noise ratio and ultra fast responsibility, will sum up all image information on it without image distortion. Based on a number of measurements, compressive sensing algorithm was used to recover images from distinct angles, which could compute different views of scene to reconstruct infrared light field scence. Two innovative applications of full image recovery using nano scale photodetector and DMD based synthetic aperture photography will also be discussed in this paper.

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Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer

Cited by 105 publications

References 40 publications

Platinum and palladium on carbon nanotubes: Experimental and theoretical studies

Platinum and palladium on carbon nanotubes: Experimental and theoretical studies

Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections

Infrared light field imaging using single carbon nanotube detector

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