2013
DOI: 10.1016/j.cplett.2013.03.079
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Platinum and palladium on carbon nanotubes: Experimental and theoretical studies

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Cited by 28 publications
(27 citation statements)
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“…Once the Pt@CNT system adopts the higher electronic state (triplet), Pt prefers to locate at the center of CNT channel as a free atom with E b = 0. Owing to the difference in atomic radii and electron affinity of these doping atoms, the p conjugation network of CNTs with different dopants would be distorted in different ways [46][47][48][49][50][51]. Consequently, doping could not only alter the binding strength of Pt on CNTs, but also influence the adsorption configuration depending on the kinds of dopants.…”
Section: Resultsmentioning
confidence: 97%
See 1 more Smart Citation
“…Once the Pt@CNT system adopts the higher electronic state (triplet), Pt prefers to locate at the center of CNT channel as a free atom with E b = 0. Owing to the difference in atomic radii and electron affinity of these doping atoms, the p conjugation network of CNTs with different dopants would be distorted in different ways [46][47][48][49][50][51]. Consequently, doping could not only alter the binding strength of Pt on CNTs, but also influence the adsorption configuration depending on the kinds of dopants.…”
Section: Resultsmentioning
confidence: 97%
“…To our knowledge, Pt atom and clusters on the external surface of pristine, defective and heteroatom doping CNTs have been extensively studied from theoretical views [43][44][45][46][47][48][49][50][51], in order to unravel the underlying interaction patterns between Pt and CNTs. However, few theoretical studies have contributed to understanding the adsorption and electronic properties of metal NPs on the internal surface of CNTs, especially doping CNTs, though great experimental advances have been achieved in these metal-in-CNT complexes [10-21, 31, 32].…”
Section: Introductionmentioning
confidence: 99%
“…Possible causes for the contact resistance between CNTs and metals are poor wetting behavior of the metal on CNTs, a mismatch of work functions and defects at the interface (Lim et al, 2009). Also the formation of a spatial gap due to impurities at the interface (Svensson and Campbell, 2011), H 2 O, CO 2 or O 2 adsorbents at the interface and formation of interfacial layers (Adjizian et al, 2013;Avouris, 2002;Collins et al, 2000;Maeda et al, 2011;Zahab et al, 2000), and lack of chemical bond formation due to missing free orbitals in the metal are possible known causes for contact resistance (Banhart, 2009;Liebau et al, 2003). Several groups predicted the influence of the CNT diameter on the contact resistance by calculating a lower Schottky barrier for larger diameter CNTs (Anantram et al, 2000;Casterman et al, 2009;Maiti and Ricca, 2004).…”
Section: Introductionmentioning
confidence: 99%
“…They are typically based on physical vapor deposition (PVD) techniques (Adjizian et al, 2013;Felten et al, 2007;Zhang et al, 2000) or on wet chemical deposition reactions (Eder, 2010;Van Hooijdonk et al, 2013). Many of the chemical deposition techniques require prior modification of the CNTs in order to form the interface with the metal in a second step (Rossell et al, 2013;Wang et al, 2012).…”
Section: Introductionmentioning
confidence: 99%
“…This electron shift at the Pd-CNTs contact is even stronger for a highly functionalized carbon surface, as it is in our case. 21 The XPS C 1s narrow scan (Fig. S1, Supporting information) shows the high level of MWCNTs functionalization that contributes in the observed BE shift for Pd lines and is included in Supplementary materials.…”
Section: Introductionmentioning
confidence: 99%