Low resistance-drift characteristics in Cr2Ge2Te6-based phase change memory devices with a high-resistance crystalline phase

Understanding the Origin of Low-Energy Operation Characteristics for Cr2Ge2Te6 Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device

“…It should be noted that the different measurement methods used for R–V and cyclic endurance measurements result in different set state resistance levels, leading to the different energy values between two measurements (details in the Experimental Methods section). A longer cyclic endurance of ∼10 6 times was already demonstrated in the CrGT-based device with a contact area of 113 × 113 nm 2 using the bipolar application of a voltage pulse …”

“…For the R–V measurement, a one-time set operation was performed on the as-fabricated cell with high-resistive state for initialization, while the test cell received a number of time set and reset pulses to stabilize the operational state before the cyclic endurance measurement. In our previous study, the resistance value for the set state gradually decreases during cyclic measurement . This decrease in resistance causes during the stabilization process for the cyclic endurance measurement and induces the difference in the resistance states between two measurements.…”

“…In our previous study, the resistance value for the set state gradually decreases during cyclic measurement. 35 This decrease in resistance causes during the stabilization process for the cyclic endurance measurement and induces the difference in the resistance states between two measurements. It should be noted that such a decrease in resistance during cyclic endurance operation was also reported in a GST-based device.…”

“…A longer cyclic endurance of ∼10 6 times was already demonstrated in the CrGT-based device with a contact area of 113 × 113 nm 2 using the bipolar application of a voltage pulse. 35 Numerical Simulation Scheme. The experimental results obtained in the high-scaled CrGT-based device motivated us to investigate the dominant phenomena that contribute to lowering the operation energy.…”

Understanding Interface-Controlled Resistance Drift in Superlattice Phase Change Memory

“…168 Fig. 5 compares the drift coefficients (v) of Sb 2 Te 3 /GST 169 SL-PCM in this work with other PCM technologies, including 170 doped GST [8], [24], [25], projected PCM [9], [10], [11], 171 TiTe 2 /Sb 2 Te 3 heterostructure [15], bilayer PCM [26], and 172 other materials [27], [28], [29]. The lowest resistance drift is 173 obtained in our 2/1.8 nm/nm Sb 2 Te 3 /GST SL-PCM [Fig.…”