2008
DOI: 10.1063/1.2907562
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Low residual doping level in homoepitaxially grown ZnO layers

Abstract: Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

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Cited by 15 publications
(12 citation statements)
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“…Therefore, two channels of observed exciton luminescence quenching can be related to thermal disintegration of both donor-bound and free exciton, in agreement with other recent reports [7,8]. To interpret the physical mechanism of quenching processes of visible emission appears more difficult, since the nature of related defect centers is not entirely clear.…”
Section: Resultssupporting
confidence: 82%
“…Therefore, two channels of observed exciton luminescence quenching can be related to thermal disintegration of both donor-bound and free exciton, in agreement with other recent reports [7,8]. To interpret the physical mechanism of quenching processes of visible emission appears more difficult, since the nature of related defect centers is not entirely clear.…”
Section: Resultssupporting
confidence: 82%
“…This behavior was also reported in Ref. [2] for MOVPE homoepitaxially grown samples. It was found the FX to D1X intensity increases when increasing the VI/II flux ratio.…”
Section: Comparison Of Different Homoepitaxially Grown Zno Layerssupporting
confidence: 70%
“…For a VI/II flux ratio of 25,000, the D1X emission intensity is similar to the one of the FX emission. In addition, for this MOVPE sample, only one activation energy of 60 meV, corresponding to the FX binding energy is measured in temperature-dependent PL measurements [2]. So it seems that increasing the VI/II ratio allows one to reduce the unintentional doping level.…”
Section: Comparison Of Different Homoepitaxially Grown Zno Layersmentioning
confidence: 98%
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“…[1][2][3][4][5][6][7][8][9][10][11] Mostly the structural and morphological properties have been discussed. Although the quality of ZnO substrates still needs to be improved, in most cases considerably improved properties of homoepitaxial ZnO thin films compared to heteroepitaxial ZnO layers (mostly on sapphire and SCAM substrates) are found.…”
Section: Introductionmentioning
confidence: 99%