Low Reset Current in Stacked $\hbox{AlO}_{x}/ \hbox{WO}_{x}$ Resistive Switching Memory

Song, Yali; Liu, Y.; Wang, Y. L.; Wang, M.; Tian, Xiaopeng; Li, Yang; Lin, Ying-Hsi

doi:10.1109/led.2011.2162055

Cited by 29 publications

(19 citation statements)

References 11 publications

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“…The bilayer structure devices have been confirmed with evidently improved resistive switching behaviors [24,25]. Several models have been proposed to explain the enhanced performance [29,30]. Moreover, shrinkage of the active memory unit area to sub-100-nm size using a plug-contact-type bottom electrode was also able to obtain a sharp distribution in switching parameters.…”

Section: Introductionmentioning

confidence: 98%

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Wang

Cao

et al. 2015

Nanoscale Res Lett

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We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3/HfO2/Al2O3 after 600°C post-annealing. The memory units of Pt/Al2O3/HfO2/Al2O3/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 103 cycles, and longer data retention at 85°C over 10 years. The possible switching mechanism of trilayer structure of Al2O3/HfO2/Al2O3 has been proposed. The trilayer structure device units of Al2O3/HfO2/Al2O3 on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory.

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Section: Introductionmentioning

confidence: 98%

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Wang

Cao

et al. 2015

Nanoscale Res Lett

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“…Since the oxygen ions could migrate in the Al oxide layer and form oxygen vacancies conductive path [9,13], Al oxide has been used as a resistive switching material for ReRAM devices by a few research groups [13][14][15]. Another benefit from the insertion of the Al oxide layer is the increase of ON/OFF ratio and hence provides room for multi-level cell operations.…”

Section: Measurements and Analysismentioning

confidence: 99%

Stack engineering for ReRAM devices performance improvement

Bai

Zhang

et al. 2014

2014 IEEE International Symposium on Circuits and Systems (ISCAS)

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Al/W:AlO x /WO y /W and Pt/AlO δ /Ta 2 O 5-x /TaO y /Pt multiple layers ReRAM devices have been fabricated and carefully studied.Experimental results exhibit significant performance improvement through the insertion of AlO x layer between the switching layer and the top electrode. Operation current is remarkably reduced, ON/OFF ratio is greatly increased, and stable multi-level operations have been successfully achieved. Multiple layers stack engineering has been proved as an efficient method to improve the performances of ReRAM devices.

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“…A typical device structure of an RRAM contains a switching layer sandwiched between top and bottom electrodes. Recent research works have shown that devices with bilayer oxide configuration exhibit enhanced switching speed [11], endurance [12], retention [13], and lower switching voltage [14], as compared to single layer devices.…”

Section: Introductionmentioning

confidence: 99%

Role of GO and r-GO in resistance switching behavior of bilayer TiO₂ based RRAM

et al. 2018

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Graphene-based resistance random access memory devices (RRAMs) have shown promise as a suitable replacement for flash memories, owing to their fast switching speed, low programming voltage, better scalability and great reliability. Furthermore, recent research works have shown bi-layer RRAM devices exhibiting better performance along the same parameters, where titania is one of the most commonly used materials. In the present work, we have studied the resistance switching behavior in a bi-layer RRAM device structure of TiO with graphene oxide (GO) and reduced graphene oxide (rGO). Switching mechanism in these devices has been investigated by detailed experimental characterization in conjunction with a finite element modeling (FEM) simulation. A dual conical conductive filament has been used in the present work, based on the modeling of the electroforming process carried out by FEM. It has been demonstrated that for the GO/TiO based hybrid RRAM device structure, GO acts as an active filament formation layer, whereas in the rGO/TiO bi-layer structure, rGO acts as a mere electrode.

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Low Reset Current in Stacked $\hbox{AlO}_{x}/ \hbox{WO}_{x}$ Resistive Switching Memory

Cited by 29 publications

References 11 publications

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Stack engineering for ReRAM devices performance improvement

Role of GO and r-GO in resistance switching behavior of bilayer TiO₂ based RRAM

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Low Reset Current in Stacked $\hbox{AlO}_{x}/ \hbox{WO}_{x}$ Resistive Switching Memory

Cited by 29 publications

References 11 publications

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Stack engineering for ReRAM devices performance improvement

Role of GO and r-GO in resistance switching behavior of bilayer TiO2 based RRAM

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Role of GO and r-GO in resistance switching behavior of bilayer TiO₂ based RRAM