Low pressure chemical vapor deposition synthesis of hexagonal boron nitride on polycrystalline metal foils

Abstract

The two-dimensional sp 2 -bonded material hexagonal boron nitride (h-BN) has unique electronic, thermal, mechanical, and chemical properties. It has recently found use as an ideal substrate for graphene-based electronic devices. We here describe synthesis of mono-to few-layer h-BN films using low pressure chemical vapor deposition (LPCVD) from borazine, with nickel, copper and platinum employed as catalytic substrates, and transfer of some of these films using a non-polymer method. Characterization of the films via Raman spectroscopy and transmission electron microscopy (TEM) is performed.Chemical vapor deposition synthesis of hexagonal boron nitride from borazine using metallic substrates.

Self‐Aligned Single‐Crystalline Hexagonal Boron Nitride Arrays: Toward Higher Integrated Electronic Devices

“…Because of its various extraordinary properties, such as high electrical resistance, chemical stability, and mechanical strength and hardness, [ 8,9 ] atomically smooth surface free of dangling bonds and charge traps, [ 10 ] and only 1.7% lattice mismatch to graphene, [ 11 ] h-BN can be served as more suitable dielectric substrate for fi eld effect transistors than traditional insulated substrate of SiO 2 /Si. [10][11][12][13][14] Previous reports have shown considerable improvement in the preparation of h-BN on metal substrates, such as Cu, [ 9,[15][16][17][18][19][20][21][22][23][24] Ni, [ 25,26 ] Pt, [27][28][29] Ru, [ 30 ] and Co [ 31 ] via the chemical vapor deposition (CVD). By using the continuous single-layer h-BN fi lm as back gate dielectric, the electronic performance of graphene and graphene-like materials were obviously improved.…”

Effect of Si doping on the electronic properties of BN monolayer

“…Thin lms of BN have been a subject of extensive studies over the past two decades. [1][2][3][4][5][6][7][8][9][10][11][12] Unlike a semi-metallic graphene, BN consisting of a few layers has a nite band gap, 10 which allows it to be used as a dielectric material in electronic devices at nanoscale. In fact, several recent experiments have demonstrated the use of two-dimensional BN as a dielectric material in graphene, graphite, and Au electrode-based devices.…”

Synthesis of large single-crystal hexagonal boron nitride grains on Cu–Ni alloy

“…However, the flakes are obtained through a highly skilled manual process-mechanical exfoliation and transferring, which is not a scalable method for practical applications. So far, many efforts have been taken on various substrates such as Ni [16][17][18][19][20][21] , Cu 3,[21][22][23][24][25][26][27] , Pt 28,29 , Ru 30,31 and Co 32 to obtain large h-BN crystals via the chemical vapour deposition (CVD) process. However, those grains in h-BN films are very small (usually o50 mm 2 ) because of high nucleation density at the early growth stages 10,11,[15][16][17]19,22 .…”

“…It is apparent that the introduction of Ni can enhance the decomposition of poly-aminoborane, which helps the reactions of desorption or the formation of Ni-B and Ni-N phases 18 , consistent with the weak h-BN growth on Cu-Ni alloy with 30 atom % Ni. To enable growth of h-BN on Cu-Ni alloy with high Ni content, one would have to increase the precursor supply; thus, the growth of h-BN enters into a completely different process window 18,19,21,23,24 .…”