Synthesis of large single-crystal hexagonal boron nitride grains on Cu–Ni alloy

Lu, Guangyuan; Wu, Tianru; Yuan, Qinghong; Wang, Huishan; Wang, Haomin; Ding, Feng; Xie, Xiaoming; Jiang, Mianheng

doi:10.1038/ncomms7160

Cited by 319 publications

(272 citation statements)

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“…Details of the substrate preparation and h ‐BN growth were described in our earlier report 22. As h ‐BN growth ended, the substrates were first maintained at 1050 °C for 10 min in an H 2 flow at a low pressure to make sure that the borazane precursor was completely cooled down.…”

Section: Methodsmentioning

confidence: 99%

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Synthesis of High‐Quality Graphene and Hexagonal Boron Nitride Monolayer In‐Plane Heterostructure on Cu–Ni Alloy

Yang

et al. 2017

Advanced Science

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Graphene/hexagonal boron nitride (h‐BN) monolayer in‐plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in‐plane epitaxy of graphene/h‐BN heterostructure is demonstrated on Cu–Ni substrates. The introduction of nickel to copper substrate not only enhances the capability of decomposing polyaminoborane residues but also promotes graphene growth via isothermal segregation. On the alloy surface partially covered by h‐BN, graphene is found to nucleate at the corners of the as‐formed h‐BN grains, and the high growth rate for graphene minimizes the damage of graphene‐growth process on h‐BN lattice. As a result, high‐quality graphene/h‐BN in‐plane heterostructure with epitaxial relationship can be formed, which is supported by extensive characterizations. Photodetector device applications are demonstrated based on the in‐plane heterostructure. The success will have important impact on future research and applications based on this unique material platform.

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Section: Methodsmentioning

confidence: 99%

“…The alloy's enhanced ability in decomposing polyaminoborane residues improves the cleanliness of the alloy surface during h ‐BN growth 22. It is found that graphene nucleates at the corners of the triangular h ‐BN grains and follows the lattice orientation of h ‐BN, indicating the epitaxial relationship between the two crystals.…”

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confidence: 99%

Synthesis of High‐Quality Graphene and Hexagonal Boron Nitride Monolayer In‐Plane Heterostructure on Cu–Ni Alloy

Yang

et al. 2017

Advanced Science

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“…7 Among all the 2D materials, few studies on single-layer h-BN exist 8,9 despite the early attempts to exfoliate it 10 and the welldeveloped synthesis techniques. [11][12][13][14][15][16][17] The reason for its difficult exfoliation to a monolayer thickness is unclear, possibly being its AA′ stacking, its slightly-ionic bonds or flatness that causes adhesion between h-BN layers and other surfaces stronger than other 2D materials. [18][19][20][21] Moreover, h-BN surfaces are hydrophillic in nature, but after being exposed to air they get covered by an hydrophobic layer of hydrocarbons as reported in h-BN nanotubes 22 and graphene.…”

Section: Introductionmentioning

confidence: 99%

Mechanical characterization and cleaning of CVD single-layer h-BN resonators

et al. 2017

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Hexagonal boron nitride is a 2D material whose single-layer allotrope has not been intensively studied despite being the substrate for graphene electronics. Its transparency and stronger interlayer adhesion with respect to graphene makes it difficult to work with, and few applications have been proposed. We have developed a transfer technique for this extra-adhesive material that does not require its visual localization, and fabricated mechanical resonators made out of chemical vapor-deposited single-layer hexagonal boron nitride. The suspended material was initially contaminated with polymer residues from the transfer, and the devices showed an unexpected tensioning when cooling them to 3 K. After cleaning in harsh environments with air at 450°C and ozone, the temperature dependence changed with f 0 Q products reaching 2 × 10 10 Hz at room temperature. This work paves the way to the realization of highly sensitive mechanical systems based on hexagonal boron nitride, which could be used as an alternative material to SiN for optomechanics experiments at room temperature.

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“…In addition, using a similar approach to the preparation of high-quality graphene layers via CVD, 15 large scalable single-crystalline h-BN films have recently been developed that can be practically utilized as a semiconductor growth substrate. 16,17 …”

Section: Introductionmentioning

confidence: 99%

Transferable single-crystal GaN thin films grown on chemical vapor-deposited hexagonal BN sheets

Chung

et al. 2017

NPG Asia Mater

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Single-crystal gallium nitride (GaN) layers were directly grown on centimeter-scale hexagonal boron nitride (h-BN). Using chemical vapor deposition (CVD), centimeter-scale h-BN films were synthesized on a single-crystal Ni(111) and readily transferred onto amorphous fused silica supporting substrates that had no epitaxial relationship with GaN. For growing fully coalescent GaN layers on h-BN, the achievement of high-density crystal growths was a critical growth step because the sp 2 -bonded h-BN layers are known to be free of dangling bonds. Unlike GaN layers grown on a typical heterogeneous sapphire substrate, the morphological and microstructural results strongly suggest a high-density growth feature that is driven by the atomic cliffs inherent in the CVD-grown h-BN layers. More importantly, the GaN layers grown on CVD-grown h-BN exhibited a flat and continuous surface morphology with well-aligned crystal orientations both along the c-axis and in-plane, indicating the characteristics of GaN heteroepitaxy on h-BN. NPG Asia Materials (2017) 9, e410; doi:10.1038/am.2017.118; published online 28 July 2017 INTRODUCTION There has been significant demand for the fabrication of conventional semiconductor devices in transferable and flexible forms to provide a route for the development of next-generation optoelectronics and electronics. 1-3 Among the various efforts to meet this demand, a new material system has been developed that involves the growth of semiconductor materials directly on twodimensional (2D) layered graphene. Because semiconductors that are grown on graphene layers can be easily transferred to other foreign substrates, including plastic and metal, all cost restrictions arising from substrates can be avoided; 4-7 furthermore, the semimetallic graphene substrates can simultaneously act as current injection and/or spreading layers. Based on these advantages, various group II-VI and III-V semiconductor nanostructures and thin films have been grown on graphene for a range of applications, including light-emitting diodes, solar cells, power generators and sensors. [8][9][10] However, semiconductor heterostructures grown on 2D films still exhibit limited manufacturing scalability because of the difficulty of preparing large-size singlecrystalline 2D substrates. Although single-crystal 2D substrates can ensure that highly crystalline semiconductors can be grown for excellent, uniform device performance, small flakes of mechanically delaminated 2D layered materials are not desirable for practical device applications. In addition, the typical large-scale 2D films synthesized on metal foils by chemical vapor deposition (CVD) are polycrystalline that degrades the crystallinity of the semiconductors grown on CVD-grown 2D films. In this study, we

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Synthesis of large single-crystal hexagonal boron nitride grains on Cu–Ni alloy

Cited by 319 publications

References 50 publications

Synthesis of High‐Quality Graphene and Hexagonal Boron Nitride Monolayer In‐Plane Heterostructure on Cu–Ni Alloy

Synthesis of High‐Quality Graphene and Hexagonal Boron Nitride Monolayer In‐Plane Heterostructure on Cu–Ni Alloy

Mechanical characterization and cleaning of CVD single-layer h-BN resonators

Transferable single-crystal GaN thin films grown on chemical vapor-deposited hexagonal BN sheets

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