Low-power transimpedance amplifier for near infrared spectroscopy

Atef, Mohamed; Atef, Ahmed; Abbas, Mohamed

doi:10.1109/iscas.2016.7539081

Cited by 14 publications

(19 citation statements)

References 11 publications

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“…Please note that differently from the work of Atef [6], an input current noise density is used instead of an equivalent input noise and this is exactly the reason a square-root of the bandwidth is taken in the numerator of the expression above. Alternatively, the FOM metric of Atef [39] can be also used:…”

Section: Reported Results and Performance Evaluationmentioning

confidence: 99%

“…Furthermore, the substrate coupling typically increases through the inductors resulting in higher cross-talks when compared to inductor-less designs (Low substrate coupling is extremely important in multi-channel solutions where crosstalk between several parallel channels have to be minimized). Finally, large group delay fluctuations can become also problematic [39] and the TIA with inductor peaking may also degrade in digital process with thin metals and lossy passive components [10].…”

Section: Inductor Peaking Tiamentioning

confidence: 99%

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A Review of Modern CMOS Transimpedance Amplifiers for OTDR Applications

Romanova

Barzdėnas

2019

Electronics

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The work presents a review of modern CMOS transimpedance amplifiers (TIAs) in the context of their application for low-cost optical time-domain reflectometry (OTDR). After introducing the basic principles behind the OTDR, the requirements for a suitable CMOS TIA are presented and discussed. A concise review of several basic TIA topologies is provided with a brief overview of their main properties. A detailed discussion is given on a representative set of approaches reported in the literature and the figure of merit (FOM) is introduced as a unified basis for performance comparison. Limitations of a single FOM as a basis for comparison are pointed out. Based on the provided discussion, some suggestions are made on the suitability of the TIA topologies for OTDR applications.

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Section: Reported Results and Performance Evaluationmentioning

confidence: 99%

Section: Inductor Peaking Tiamentioning

confidence: 99%

A Review of Modern CMOS Transimpedance Amplifiers for OTDR Applications

Romanova

Barzdėnas

2019

Electronics

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“…4. Although the RGC with an inverter auxiliary amplifier has been reported in 40-nm CMOS technology [11], it is not suitable to the 0.18-µm CMOS technology platform due to the different supply voltage. To insure the transistor M 5 operates in the saturation region and has a proper gate voltage, a SF, consisting of a PMOS transistor M 4 and the resistor R 4 , is introduced (like a high-pass filter).…”

Section: Tia Input Stage Implementationmentioning

confidence: 99%

“…To meet the requirements of low cost, high integration, and high manufacturability, TIAs based on CMOS technology have been actively investigated in the past decade. Due to the features of wide bandwidth and low power consumption, TIAs with regulated cascode (RGC) topology are widely explored in broadband optical receiver system [6,7,8,9,10,11]. Nevertheless, the input impedance of conventional RGC TIA needs to be further modified to provide enough bandwidth.…”

Section: Introductionmentioning

confidence: 99%

“…Yet, wide-band obtained by these techniques is at the expense of large chip area or/and gain reduction. Besides, along with the scaledown of CMOS technology, designers began to use advanced technology to improve the performance of TIA [10,11]. However, there still have many problems, such as high cost, large leakage current, and constrained circuit structure caused by low supply voltage.…”

Section: Introductionmentioning

confidence: 99%

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A design methodology to extend bandwidth for regulated cascode transimpedance amplifier

Xie

Mao

et al. 2017

IEICE Electron. Express

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This brief analyzes the performance of regulated cascode (RGC) topology and develops a broadband transimpedance amplifier (TIA) incorporated with a novel dual shunt-feedback configuration. Compared to traditional RGC circuit, the proposed TIA improves the natural frequency and optimizes the damping factor. Furthermore, the common source auxiliary amplifier is replaced by an inverter amplifier to provide extra gain and reduce the equivalent input noise current. Based on 0.18-µm CMOS technology, a TIA with enhanced RGC structure was optimized and implemented, and the fabricated chip was mounted on a Rogers 4003C printed circuit board. The experimental results demonstrate a 5.2 GHz bandwidth and a 60.5 dBΩ transimpedance gain for 0.5 pF photodetector capacitance. The fluctuation of group delay is less than 50 ps, and the measured average equivalent input noise current density is about 14.99 pA/√Hz. The chip consumes 28.4 mW using 1.8 V supply.

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A 2.71‐pA/√Hz ultra‐low noise, 70‐dB dynamic range CMOS transimpedance amplifier with incorporated microstrip line techniques over extended bandwidth

Gorre

Vignesh

Kumar

et al. 2022

Circuit Theory & Apps

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Recent advancements in the area of telemedicine have focused on remote patient monitoring services as a new frontier in medical applications. The present work reports a 65‐nm complementary metal–oxide–semiconductor (CMOS)‐based transimpedance amplifier (TIA) in an optical radar system for non‐contact patient monitoring. A T‐shaped microstrip line (MSL) integrated with variable gain common source TIA using MSL peaking technique and off‐chip post‐amplification integration is a newly proposed architecture to achieve a ultra‐low noise, high dynamic range (DR) and high figure of merit over broadband than a traditional TIAs. First, the integrated T‐shaped MSL develops an additional resonant frequency that resonates with a photodiode capacitance improving the bandwidth performance at higher Q values. Second, the shunt MSL peaking technique that introduces an additional conjugate pole‐pair that cancels the effect of input capacitance helps to further improve the bandwidth of the TIA. Finally, an active feedback concept achieves a wide linear dynamic range enabling high TIA detectability. The proposed TIA realizes an impedance bandwidth of 770 MHz ranging from 7.12 to 7.89 GHz with a transimpedance gain of 105.1 dBΩ and ultra‐low input‐referred noise (IRN) density of 2.71 pA/√Hz. A high linear DR of 70 dB is achieved by employing a variable gain control scheme with a low group delay variation of 0.81 ns. The proposed work demonstrates a 1‐Gb/s data rate while a bit‐error rate less than 10−12 is achieved. The TIA consumes a power of 0.82 mW under the supply voltage of 1.2 V.

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Low-power transimpedance amplifier for near infrared spectroscopy

Cited by 14 publications

References 11 publications

A Review of Modern CMOS Transimpedance Amplifiers for OTDR Applications

A Review of Modern CMOS Transimpedance Amplifiers for OTDR Applications

A design methodology to extend bandwidth for regulated cascode transimpedance amplifier

A 2.71‐pA/√Hz ultra‐low noise, 70‐dB dynamic range CMOS transimpedance amplifier with incorporated microstrip line techniques over extended bandwidth

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