2006
DOI: 10.1109/dft.2006.39
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Low Power SoC Memory BIST

Abstract: With the ever increasing number of memories embedded in a System-on-Chip (SoC), power dissipation due to test has become a serious concern. This paper studies power dissipation in SRAMs and proposes a novel low power memory BIST. Its effectiveness is evaluated on memories in 130 and 90 nm technologies. As demonstrated, up to 30% power reduction can be achieved with virtually zero hardware overhead.

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Cited by 7 publications
(1 citation statement)
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“…With the ever-increasing number of memories embedded in a system on chip (SoC), power dissipation due to memory test has become a serious concern. In [42], the authors proposed a novel low-power memory BIST. Its effectiveness is evaluated on memories in 130 and 90 nm technologies.…”
Section: By Separate Testing Strategy For Memorymentioning
confidence: 99%
“…With the ever-increasing number of memories embedded in a system on chip (SoC), power dissipation due to memory test has become a serious concern. In [42], the authors proposed a novel low-power memory BIST. Its effectiveness is evaluated on memories in 130 and 90 nm technologies.…”
Section: By Separate Testing Strategy For Memorymentioning
confidence: 99%