“…2(b) with the design approach adapted from previous work on low-power crystal oscillators [30]. An automatic gain control (AGC) circuit [11,31] is added to minimize the power consumption by setting the transconductance, gm, at the critical point. The AGC circuitry also helps prevent driving the MEMS resonator into the non-linear regime.…”
Section: A Double-ended Tuning Forkmentioning
confidence: 99%
“…A CMOS circuit based on Pierce topology [11,30] is employed due to its simplicity, stability and potential for power minimization with the gain provided by a single transistor. Fig.…”
Section: A Double-ended Tuning Forkmentioning
confidence: 99%
“…Traditional foil gauges and piezoresistive strain gauges are usually associated with significant static power dissipation, both in the transducer element as well as in the associated interface circuitry. While MEMS resonant strain gauges have promised significantly lower power consumption [11] than traditional foil gauges, a low-power implementation has not yet been reported to date.…”
Section: Introductionmentioning
confidence: 99%
“…This requirement puts a significant constraint on the power demand of the sensors themselves [1,5,6]. Silicon micromachined resonant sensors have emerged as a potential candidate to address this requirement [7][8][9][10][11]. They have the inherent potential of being compatible with batch fabrication, miniaturization and can also be co-integrated with CMOS circuitry in a small form-factor package.…”
Section: Introductionmentioning
confidence: 99%
“…A low power front-end interface circuit [11] for such resonators thus has broad applicability to a variety of sensing contexts. This would enable ultra-low power operation for both the MEMS sensors as well as the interface circuit in order to address practical applications.…”
Abstract-This paper describes a technical approach towards the realization of a low-power temperature-compensated micromachined resonant strain sensor. The sensor design is based on two identical and orthogonally-oriented resonators where the differential frequency is utilized to provide an output proportional to the applied strain with temperature compensation achieved to first order. Interface circuits comprising of two front-end oscillators, a mixer and low-pass filter are designed and fabricated in a standard 0.35µm CMOS process. The characterized devices demonstrate a scale factor of 2.8Hz/µε over a strain range of 1000µε with excellent linearity over the measurement range. The compensated frequency drift due to temperature is reduced to 4% of the uncompensated value through this scheme. The total continuous power consumption of the strain sensor is 3µW from a 1.2V supply. This low power implementation is essential to enable battery-powered or energy harvesting enabled monitoring applications.
“…2(b) with the design approach adapted from previous work on low-power crystal oscillators [30]. An automatic gain control (AGC) circuit [11,31] is added to minimize the power consumption by setting the transconductance, gm, at the critical point. The AGC circuitry also helps prevent driving the MEMS resonator into the non-linear regime.…”
Section: A Double-ended Tuning Forkmentioning
confidence: 99%
“…A CMOS circuit based on Pierce topology [11,30] is employed due to its simplicity, stability and potential for power minimization with the gain provided by a single transistor. Fig.…”
Section: A Double-ended Tuning Forkmentioning
confidence: 99%
“…Traditional foil gauges and piezoresistive strain gauges are usually associated with significant static power dissipation, both in the transducer element as well as in the associated interface circuitry. While MEMS resonant strain gauges have promised significantly lower power consumption [11] than traditional foil gauges, a low-power implementation has not yet been reported to date.…”
Section: Introductionmentioning
confidence: 99%
“…This requirement puts a significant constraint on the power demand of the sensors themselves [1,5,6]. Silicon micromachined resonant sensors have emerged as a potential candidate to address this requirement [7][8][9][10][11]. They have the inherent potential of being compatible with batch fabrication, miniaturization and can also be co-integrated with CMOS circuitry in a small form-factor package.…”
Section: Introductionmentioning
confidence: 99%
“…A low power front-end interface circuit [11] for such resonators thus has broad applicability to a variety of sensing contexts. This would enable ultra-low power operation for both the MEMS sensors as well as the interface circuit in order to address practical applications.…”
Abstract-This paper describes a technical approach towards the realization of a low-power temperature-compensated micromachined resonant strain sensor. The sensor design is based on two identical and orthogonally-oriented resonators where the differential frequency is utilized to provide an output proportional to the applied strain with temperature compensation achieved to first order. Interface circuits comprising of two front-end oscillators, a mixer and low-pass filter are designed and fabricated in a standard 0.35µm CMOS process. The characterized devices demonstrate a scale factor of 2.8Hz/µε over a strain range of 1000µε with excellent linearity over the measurement range. The compensated frequency drift due to temperature is reduced to 4% of the uncompensated value through this scheme. The total continuous power consumption of the strain sensor is 3µW from a 1.2V supply. This low power implementation is essential to enable battery-powered or energy harvesting enabled monitoring applications.
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