Low-power dihexylquaterthiophene-based thin film transistors for analog applications

Serban, Dana Alina; Kilchytska, Valeriya; Vlad, Alexandru; Martin-Hoyas, A.; Nysten, Bernard; Jonas, Alain M.; Geerts, Yves; Lazzaroni, Roberto; Bayot, Vincent; Flandre, Denis; Melinte, Sorin

doi:10.1063/1.2904963

Cited by 8 publications

(12 citation statements)

References 28 publications

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“…Ambipolar behaviours are observed for both systems. This observation is in contradiction with previous reports which showed that DH4T-based OTFTs present p-type behaviours in both organic [32] and inorganic [33] dielectric materials. However, it has already been reported that organic semiconductors can be ambipolar on hydroxyl-terminated dielectrics though surface dipoles make n-channel behaviour less likely [10,16,23,34].…”

Section: Discussioncontrasting

confidence: 99%

Hybrid gate dielectrics: a comparative study between polyvinyl alcohol/ $$\hbox {SiO}_{2}$$ SiO 2 nanocomposite and pure polyvinyl alcohol thin-film transistors

Afsharimani

Nysten

2019

Bull Mater Sci

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Polyvinyl alcohol (PVA) thin films as polymer gate dielectrics, with and without SiO 2 nanoparticles were fabricated using spin-coating. Surface roughness and hydrophilicity of PVA and PVA/SiO 2 thin films were studied by contact-angle measurements and atomic force microscopy. The dielectric properties were characterized via capacitance and leakage-current measurements on metal-insulator-metal structures. In order to further investigate the application potential of such materials as a replacement for conventional inorganic dielectrics such as SiO 2 in organic thin-film transistors, devices were fabricated based on these polymers using α, ω-dihexylquaterthiophene as an active layer. Performance of the devices was realized by electrical measurements and Kelvin probe force microscopy. All transistors showed hole and electron mobilities in the low-voltage range. PVA/SiO 2 films showed larger capacitance, less hydrophilicity, rougher surfaces and considerable leakage currents compared with those with neat PVA. Although integrating nanoparticles modified surface electronic properties and showed a shift in surface potential as observed in Kelvin probe force measurements, it appears that non-polymeric and neat polymeric dielectric materials could still be a privilege to nanocomposite polymeric dielectrics for optoelectronic applications.

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Section: Discussioncontrasting

confidence: 99%

Hybrid gate dielectrics: a comparative study between polyvinyl alcohol/ $$\hbox {SiO}_{2}$$ SiO 2 nanocomposite and pure polyvinyl alcohol thin-film transistors

Afsharimani

Nysten

2019

Bull Mater Sci

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“…Next, we illustrate that OFETs built with MIMIC‐processed Pt electrodes display better performance compared to those obtained by standard techniques22 (i.e., transistors with Pd source–drain electrodes processed by hard‐mask lithography and electron‐beam evaporation). We used thermally grown SiO 2 dielectrics as presented in Table 1, where also the width ( W ) and length ( L ) of the fabricated OFETs are given 23.…”

Section: Structural (W L Sio2 Thickness) and Electrical (Rsd Gm Mamentioning

confidence: 96%

Towards All‐Organic Field‐Effect Transistors by Additive Soft Lithography

Serban¹,

Greco²,

Melinte³

et al. 2009

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“…Thiophene (C 4 H 4 S) derivative π-conjugated systems are of much interest in molecular electronic applications − for the fabrication of field-effect transistors, light-emitting diodes, and solar cells because of a number of interesting properties. These include charge transport behavior with high carrier mobilities, light-harvesting efficiency, and structural versatility.…”

Section: Introductionmentioning

confidence: 99%

Thiophene Derivatives on Gold and Molecular Dissociation Processes

et al. 2017

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We report a systematic study of thiophene derivatives on gold surfaces. These molecules are of interest in molecular electronics, and the characracteristics of the thiophene–electrode interface in devices needs to be understood as it affects electron transport characteristics. Some experiments indicated S–C bond scission in contact with metals resulting in disruption of the π-electron system that affects charge transport, which would also be affected by presence of split-off chemisorbed sulfur. We explored this dissociation aspect by photoemission for the case of monocrystalline Au(111) surfaces and Au films grown on mica for a series of polythiophenes molecules (nT, n = 1–4, 6) as well as for α,ω-diquaterthiophene (DH4T) and dihexylsexithiophene (DH6T). The S 2p X-ray photoelectron spectroscopy peaks are found to have complex line shapes corresponding to S atoms with different core level binding energies (CLBE). Density functional theory calculations of adsorption energies and CLBEs were performed for various adsorption configurations of thiophene on a perfect Au(111) plane and for comparison, calculations were also performed for bithiophene, terthiophene, alkenethiol, alkenethiol chain, and a broken thiophene related metallocycle, incorporating an Au adatom and an S atom. On the basis of these results we relate the different contributions to the S 2p peak to intact molecules on different adsorption sites and broken molecules. Calculations in particular show that the CLBEs for intact thiophene (1T) can be the same as for the alkene and alkanethiol cases as opposed to usual assumptions in the literature. The existence of intact thiophenes is confirmed by the presence of clear π resonance peaks in the near edge X-ray fine structure (NEXAFS) spectra. Spontaneous dissociation appears to a variable extent in different samples, and we tentatively relate this to the presence of a more or less large number of steps and defects sites. X-ray induced beam damage was investigated for 1T and 3T using an intense synchrotron beam of 260 eV photons, and showed changes in the S 2p spectra related to S–C bond scission.

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Low-power dihexylquaterthiophene-based thin film transistors for analog applications

Cited by 8 publications

References 28 publications

Hybrid gate dielectrics: a comparative study between polyvinyl alcohol/ $$\hbox {SiO}_{2}$$ SiO 2 nanocomposite and pure polyvinyl alcohol thin-film transistors

Hybrid gate dielectrics: a comparative study between polyvinyl alcohol/ $$\hbox {SiO}_{2}$$ SiO 2 nanocomposite and pure polyvinyl alcohol thin-film transistors

Towards All‐Organic Field‐Effect Transistors by Additive Soft Lithography

Thiophene Derivatives on Gold and Molecular Dissociation Processes

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