Low-power bipolar resistive switching TiN/HfO<sub>2</sub>/ITO memory with self-compliance current phenomenon

Ye, Cong; Zhan, Chao; Tsai, Tsung‐Ming; Chang, Kuan‐Chang; Chen, Min-Chen; Chang, Ting‐Chang; Deng, Tengfei; Wang, Hao

doi:10.7567/apex.7.034101

Cited by 86 publications

(49 citation statements)

References 24 publications

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“…The self‐compliance current, the set, and reset selector powers were approximately 12 μA, 25 μW, and less than 5 μW, which indicate that the proposed selectors have a self‐protection property and provide a guarantee of the low power consumption of the device. The high endurance voltage reached ±10 V, which is the highest ever proposed . It is significant that the proposed selector has a self‐protection property and provides a guarantee of the low power consumption of the device and the system.…”

Section: Resultsmentioning

confidence: 90%

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A Study on the Interfacial Structure Design of Self‐Compliance Ni/HfO_x/Ni Bipolar Selectors and Trap‐to‐Trap Tunneling Mechanism Caused by Redox Reaction

Wang

Cao

Miao

et al. 2019

Physica Status Solidi (a)

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Selectors are considered some of the most significant devices applied to the integration of resistive random access memory (RRAM). Self‐compliance selectors promote the stability of one selector and one resistor (1S1R) cell to reduce additional compliance current circuits without compromising RRAM switching performance. Herein, a Ni/HfOx/Ni bipolar selector with special cluster microstructures is fabricated via a facial magnetron sputtering technology, which has self‐compliance (±12 μA) performance and ultrahigh voltage endurance (±10 V). To investigate the mechanism, theoretical models for the self‐compliance selectors are proposed. The results demonstrate that traps and special interfaces are formed through redox reactions. Resistive switching properties are caused by the trap‐to‐trap tunneling structure of the HfOx–NiOy layers. At the interfaces of HfOx–NiOy oxide layers, the tunneling current reaches a saturation state, leading to the self‐compliance phenomenon, which provides a theoretical and research foundation for the development of RRAM technology.

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Section: Resultsmentioning

confidence: 90%

“…To further investigate the operational mechanism of the self‐compliance selector, the redox reaction in the multilayer is discussed. The redox reaction in the swept voltage scanning process can be expressed as the following equation

{normalO}^{2 -} \to V_{normalO}^{2 +} + \frac{1}{2} {normalO}^{2} + 2 {normale}^{-}

…”

Section: Resultsmentioning

confidence: 99%

A Study on the Interfacial Structure Design of Self‐Compliance Ni/HfO_x/Ni Bipolar Selectors and Trap‐to‐Trap Tunneling Mechanism Caused by Redox Reaction

Wang

Cao

Miao

et al. 2019

Physica Status Solidi (a)

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“…6a ,b, respectively. In RRAM operation, the Ohmic contact relationship is described by I ( V ) = aV while the space charge limited current (SCLC) is represented as I ( V ) = aV + βV 2 23 24 25 . In the positive voltage region, the slopes of the linear fitting curves at LRS and HRS (<0.38 V) are about 1 correspond to Ohmic conduction behavior.…”

Section: Resultsmentioning

confidence: 99%

Point contact resistive switching memory based on self-formed interface of Al/ITO

Qiu

Wei

et al. 2016

Sci Rep

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Point contact resistive switching random access memory (RRAM) has been achieved by directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room-temperature deposited Al/ITO shows an asymmetrical bipolar resistive switching (BRS) behavior after a process of initialization which induces a stable high resistive state (HRS). It might be caused by the in-situ formation of an ultra-thin layer (≈4 nm) at the interface. By comparison, the Al/ITO device after vacuum annealed exhibits typical symmetrical BRS without an initiation or electroforming process. This can be ascribed to the ex-situ thickening of the interfacial layer (≈9.2 nm) to achieve the stable HRS after heat treatment. This work suggests that the self-formed interface of active Al electrode/ITO would provide the simplest geometry to construct RRAM.

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“…These characteristics are also closely dependent on the fabrication conditions of the HfO 2 insulator itself, such as deposition methods, on the postdeposition annealing temperature [3], [8], on the interface status near the electrode [5], [6], and on the electrode composition of TE and BE [6], [9]. The RS characteristics do not originate entirely from one dominant parameter, but they are kinds of synergic characteristics contributed by all the fabrication parameters mentioned earlier.…”

Section: Introductionmentioning

confidence: 98%

Asymmetric Current Behavior on Unipolar Resistive Switching in Pt/HfO₂/Pt Resistor With Symmetric Electrodes

Kang

Park

2016

IEEE Trans. Electron Devices

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The influence of electrodes on unipolar switching characteristics of a Pt/HfO 2 /Pt resistor with symmetric electrodes is investigated by comparing the reset voltage (V R ), set voltage (V S ), current at low resistance state (I LRS ) and high resistance state ( I HRS ), and I LRS /I HRS with positive and negative voltage polarities. The values of ±V R and ±V S of the Pt/HfO 2 /Pt resistor for respective positive and negative polarities are very similarly distributed. Concerning current levels at two resistance states (I LRS and I HRS ), however, unexpected asymmetric current characteristics of the Pt/HfO 2 /Pt symmetric resistor are observed. The asymmetric current behavior at the symmetric Pt/HfO 2 /Pt resistor indicates the role of different environments at top and bottom interfaces, although they are formed with the same electrode material using the same deposition method. Two types of interfaces, Pt/HfO 2 and HfO 2 /Pt, are analyzed using X-ray photoelectron spectroscopy. The bottom interface of HfO 2 /Pt, postprocessed with insulating HfO 2 film deposition, is probed nonstoichiometric HfO x and weak oxidation of Pt electrode and is influenced by the variation of the current levels and the current ratio at both high and low resistance states. Index Terms-HfO 2 insulator, interface, metal electrode, resistive switching (RS).

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Low-power bipolar resistive switching TiN/HfO₂/ITO memory with self-compliance current phenomenon

Cited by 86 publications

References 24 publications

A Study on the Interfacial Structure Design of Self‐Compliance Ni/HfO_x/Ni Bipolar Selectors and Trap‐to‐Trap Tunneling Mechanism Caused by Redox Reaction

A Study on the Interfacial Structure Design of Self‐Compliance Ni/HfO_x/Ni Bipolar Selectors and Trap‐to‐Trap Tunneling Mechanism Caused by Redox Reaction

Point contact resistive switching memory based on self-formed interface of Al/ITO

Asymmetric Current Behavior on Unipolar Resistive Switching in Pt/HfO₂/Pt Resistor With Symmetric Electrodes

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Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon

Cited by 86 publications

References 24 publications

A Study on the Interfacial Structure Design of Self‐Compliance Ni/HfOx/Ni Bipolar Selectors and Trap‐to‐Trap Tunneling Mechanism Caused by Redox Reaction

A Study on the Interfacial Structure Design of Self‐Compliance Ni/HfOx/Ni Bipolar Selectors and Trap‐to‐Trap Tunneling Mechanism Caused by Redox Reaction

Point contact resistive switching memory based on self-formed interface of Al/ITO

Asymmetric Current Behavior on Unipolar Resistive Switching in Pt/HfO2/Pt Resistor With Symmetric Electrodes

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Low-power bipolar resistive switching TiN/HfO₂/ITO memory with self-compliance current phenomenon

A Study on the Interfacial Structure Design of Self‐Compliance Ni/HfO_x/Ni Bipolar Selectors and Trap‐to‐Trap Tunneling Mechanism Caused by Redox Reaction

A Study on the Interfacial Structure Design of Self‐Compliance Ni/HfO_x/Ni Bipolar Selectors and Trap‐to‐Trap Tunneling Mechanism Caused by Redox Reaction

Asymmetric Current Behavior on Unipolar Resistive Switching in Pt/HfO₂/Pt Resistor With Symmetric Electrodes