A Study on the Interfacial Structure Design of Self‐Compliance Ni/HfOx/Ni Bipolar Selectors and Trap‐to‐Trap Tunneling Mechanism Caused by Redox Reaction
Abstract:Selectors are considered some of the most significant devices applied to the integration of resistive random access memory (RRAM). Self‐compliance selectors promote the stability of one selector and one resistor (1S1R) cell to reduce additional compliance current circuits without compromising RRAM switching performance. Herein, a Ni/HfOx/Ni bipolar selector with special cluster microstructures is fabricated via a facial magnetron sputtering technology, which has self‐compliance (±12 μA) performance and ultrahi… Show more
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