Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

Lee, H.Y.; Chen, P.S.; Wu, Tong; Chen, Y.S.; Wang, C.C.; Tzeng, Pei-Jer; Lin, Cheng-Li; Chen, F.; Lien, Chenhsin; Tsai, M. J.

doi:10.1109/iedm.2008.4796677

Cited by 463 publications

(335 citation statements)

References 7 publications

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“…Lee et al [22] reported on the bipolar resistive switching characteristics of a TiN/TiO x /HfO x /TiN RRAM device. The switching speed of this device is as fast as 5 ns, the fastest speed yet reported.…”

Section: Operating Speedmentioning

confidence: 99%

“…In some RRAM devices, the resistance ratio can be as high as six or seven orders of magnitude [21]. Such a huge resistance ratio suggests the possibility of achieving high-density memory by means of multibit or multilevel storage [21,22].…”

Section: Resistance Ratiomentioning

confidence: 99%

“…Multilevel storage can enhance storage density, but requires a large enough resistance ratio between each state to enable an external circuit to distinguish between states. Multilevel storage can be achieved by controlling either compliance current (I comp ) or operating voltage [22,[24][25][26]. In our previous work [5], a WO 3 -based RRAM device with Cu/WO 3 /Pt structure was demonstrated to have multilevel storage capability.…”

Section: Multilevel Storagementioning

confidence: 99%

“…To obtain further improvement, Lee et al [22] added an additional thin Ti layer as a reactive buffer layer between the HfO 2 resistive-switching layer and the top electrode. Excellent characteristics were demonstrated in the buffer layer heterostructure memory device, such as low set/reset voltages, low current, high resistance ratio, fast switching, and long data retention.…”

Section: Effect Of Structurementioning

confidence: 99%

“…All these results indicate that the Ti buffer layer is important in improving resistive-switching. A buffer layer of oxygen ion conductors was used; the improvement can be attributed to the ability of Ti to absorb oxygen atoms [22].…”

Section: Effect Of Structurementioning

confidence: 99%

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An overview of resistive random access memory devices

Long

Liu

et al. 2011

Chin. Sci. Bull.

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With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.

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Section: Operating Speedmentioning

confidence: 99%