Low power and high linear reconfigurable CMOS LNA for multi-standard wireless applications

Taibi, Abdelkader; Slimane, Abdelhalim; Belaroussi, M.T.; Tedjini, Sid Ahmed; Trabelsi, Mohamed

doi:10.1109/icm.2013.6734991

Cited by 15 publications

(3 citation statements)

References 14 publications

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“…The measurement results of the proposed LNA are summarized with recently published information in Table 1. For performance comparison, the figure of merit (FOM) is defined by [31]:…”

Section: Measurement Resultsmentioning

confidence: 99%

Switched Low-Noise Amplifier Using Gyrator-Based Matching Network for TD-LTE/LTE-U/Mid-Band 5G and WLAN Applications

et al. 2021

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This paper presents a triple-band low-noise amplifier (LNA) fabricated using a 0.18 μm Complementary Metal-Oxide-Semiconductor (CMOS) process. The LNA uses a double-peak load network with a switched component to accomplish the triple-band operation. Moreover, noise reduction using a substrate resistor to ameliorate the noise performance is presented. Noise reduction of 1.5 dB can be achieved at 2.5 GHz without additional dc power and extra manufacturing costs. An input matching technique is realized simultaneously using a gyrator-based feedback topology. The triple-band LNA can be realized by using a dual-band input network with a switched matching mechanism. The target frequencies of the triple-band LNA are 2.3–2.7 GHz, 3.4–3.8 GHz, and 5.1–5.9 GHz, covering the operating frequency bands of time-division long-term evolution (TD-LTE), mid-band Fifth-generation (5G), LTE-unlicensed (LTE-U) band, and Wireless LAN (WLAN) technology. The measured power gains and noise figures at 2.5, 3.5, and 5.2 GHz are 12.3, 15.3, and 13.1 dB and 2.3, 2.2, and 2.6 dB, respectively.

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“…The measurement results of the proposed LNA are summarized with recently published information in Table 1. For performance comparison, the figure of merit (FOM) is defined by [31]:…”

Section: Measurement Resultsmentioning

confidence: 99%

Switched Low-Noise Amplifier Using Gyrator-Based Matching Network for TD-LTE/LTE-U/Mid-Band 5G and WLAN Applications

et al. 2021

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“…To compare the performances of the LNAs, the figure of merit (FoM) is calculated as defined in [26]:…”

Section: Harmonic Balance Simulationmentioning

confidence: 99%

A Low‐Power WLAN CMOS LNA for Wireless Sensor Network Wake‐Up Receiver Applications

et al. 2023

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Wireless communication integration is related to many challenges such as reliability, quality of service, communication range, and energy consumption. As the overall performance of wireless sensor networks (WSN) will be improved if the capacity of each sensor node is optimized, several techniques are used to fine-tune the various circuits of each node. In recent works, the wake-up receiver nodes have been introduced to minimize latencies without increasing energy consumption. To overcome the sensitivity of wake-up receiver limitations, a design of a low-noise amplifier (LNA) with several design specifications is required. This article discusses the relevance of the wake-up receiver in WSN applications and provides a brief study of this component. An LNA design for WSN wake-up receiver applications is presented. The challenging task of the LNA design is to provide equitable trade-off performances such as noise figure, gain, power consumption, impedance matching, and linearity. The LNA circuit is designed for wireless personal area network (WLAN) standards utilizing RF-TSMC CMOS 0.18 μm. Two innovative techniques are applied to the LNA topology to improve its performance: forward body biasing is used to reduce power consumption by 11.43 mW, and substrate resistance is added to reduce noise by 1.8 dB. The developed LNA achieves a noise figure of 1.6 dB and a power gain of 21.7 dB at 5.2 GHz. At 0.6 V, the designed LNA dissipates 0.87 mW.

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“…Linearity improvement techniques could be analyzed and applied to overcome the restrictions seen on the results of this work. In [56] linearization techniques using parallel PMOS devices would be applied to help. Also, differential implementations would be studied, however with added power and area.…”

Section: Future Workmentioning

confidence: 99%

Bluetooth low energy RF front-end for low-voltage applications in CMOS technology.

Silva¹

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Este trabalho apresenta a análise, métodos de projeto e implementação de circuitos eletrônicos em tecnologia MetalÓxido Silício Complementar (CMOS) para operação em rádio frequências na banda industrial, científica e médica, seguindo o protocolo de comunicação Bluetooth Low Energy, para a banda de frequência de 2,4 GHz a 2,4835 GHz. São apresentadas as motivações atuais para o trabalho com o padrão Bluetooth Low Energy, assim como os parâmetros de performance necessários para o projeto. Este protocolo oferece um conjunto de especificações mais flexíveis, ajudando na redução da tensão de alimentação e do consumo de potência. Estão incluídas considerações sobre o trabalho com transistores de efeito de campo em MetalÓxido Silício em baixas tensões, incluindo sua operação na região de inversão fraca. Três implementações são apresentadas, com resultados ,para blocos de Amplificador de Baixo Ruído e bloco conjunto Amplificador de Baixo Ruído e Misturador de Frequências. O sinal convertido a frequência intermediáriaé analisado, assim como a operação do Amplificador de Baixo Ruído. Todos os projetos apresentados mostraram um consumo de potência abaixo de 1 mW, para tensão de alimentação 0,5 V e linearidade compatível com potências de entrada até-20 dBm.

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Low power and high linear reconfigurable CMOS LNA for multi-standard wireless applications

Cited by 15 publications

References 14 publications

Switched Low-Noise Amplifier Using Gyrator-Based Matching Network for TD-LTE/LTE-U/Mid-Band 5G and WLAN Applications

Switched Low-Noise Amplifier Using Gyrator-Based Matching Network for TD-LTE/LTE-U/Mid-Band 5G and WLAN Applications

A Low‐Power WLAN CMOS LNA for Wireless Sensor Network Wake‐Up Receiver Applications

Bluetooth low energy RF front-end for low-voltage applications in CMOS technology.

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