Low-power active mixer for Ku-band application using SiGe HBT MMIC technology

Schad, K.-B.; Schumacher, Hermann; Schüppen, A.

doi:10.1109/mwsym.2000.861035

Cited by 15 publications

(11 citation statements)

References 6 publications

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“…However, our proposed mixer performs comparably with only 3 mW. Figure 13 compares Rx mixer performances recently reported in the frequency range from 20 to 30 GHz [3][4][5][6][7][8][9]. To our knowledge, the lowest power consumption in the previous works, 6.8 mW, was achieved with CG of 1 dB in the 22-29 GHz band [6].…”

Section: Measurement Resultsmentioning

confidence: 76%

“…For the transmitter (Tx) mixer, high linearity that shows large inputsignal capability is the most important characteristic. To meet these requirements, Gilbert-cell configuration is often used for the Rx and Tx mixers because of its high performance in terms of low distortion and high gain [3][4][5][6][7][8]. However, since the Gilbert-cell mixer initially consists of stacked transistors, a higher supply voltage of more than 2 V is needed for mixers with bipolar transistors.…”

Section: Introductionmentioning

confidence: 99%

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Low-power K-band pseudo-stacked mixer with linearity enhancement technique

Shiramizu

Masuda

Nakamura

et al. 2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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A low-power transmitter mixer and a receiver mixer operating in the K-band frequency region have been developed. Both mixers can be operated at a low supply voltage of 1.5 V because of a pseudo-stacked configuration using an on-chip transformer. For the transmitter mixer, an emitter degeneration resistor in parallel with a capacitor is introduced to obtain both high linearity and high-gain. Moreover, an emitter degeneration inductor of the receiver mixer improves the linearity characteristics. The proposed mixers are fabricated using 0.18-m SiGe BiCMOS technology. The transmitter mixer achieves a conversion gain of -0.1 dB, input P1dB of -11 dBm, and IIP3 of -1.2 dBm. The receiver mixer achieves a conversion gain of 11.2 dB, input P1dB of -23 dBm, and IIP3 of -13 dBm. These results indicate that these mixer design techniques are suitable to be applied for low-power transceivers within the quasi-millimeter-wave frequency region.Index Terms -Mixer, low voltage, low power, high linearity, quasi-millimeter-wave, on-chip transformer.

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Section: Measurement Resultsmentioning

confidence: 76%

Section: Introductionmentioning

confidence: 99%

Low-power K-band pseudo-stacked mixer with linearity enhancement technique

Shiramizu

Masuda

Nakamura

et al. 2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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“…Silicon with its low cost features and its possibility to integrate SiGe-HBT (heterojunction bipolar transistor) and CMOS (complementary metal oxide semiconductor) technology is predestinated for one chip solutions. SiGe-HBTs have proven their excellent RF capabilities [2,3,4]. The CMOS part can perform the digital signal processing.…”

Section: Introductionmentioning

confidence: 99%

“…One application of this oscillator can be the local oscillator for a highly integrated RF frontend, like an active mixer using the Gilbert cell approach [3]. The frequency dependent resistance has the form:…”

Section: Introductionmentioning

confidence: 99%

24GHz SiGe-MMIC Oscillator Realized with Lumped Elements in a Production Line

Abele

Sonmez

Schad

et al. 2000

2000 30th European Microwave Conference

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A 24GHz MMIC (monolithic microwave integrated circuit) oscillator with an area consumption of only 280gm. 360gm including all biasing and probing pads is presented.To obtain this small size lumped elements were used. The oscillator was realized in the production line process offered by Temic Semiconductors GmbH using standard transistors and a low resistivity (2Om) substrate 1ll. The oscillation power is -5dBm and the phase noise at lMHz off-carrier is -108dBc/Hz. 1Ii i2 U2 U1

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“…Several high frequency mixers (>20 GHz) have been developed in SiGe technology recently [1]- [5]. They are active mixers based on Gilbert-cell topology that usually offers high conversion gain, moderate noise figure and relatively poor linearity as compared with passive mixers.…”

Section: Introductionmentioning

confidence: 99%