Low phase noise 77 GHz VCO with optimized terminated impedance at fundamental and second harmonic frequencies

Watanabe, Shinsuke; Matsuzuka, Takayuki; Amasuga, Hirotaka; Goto, S.; Oku, T.; Ishikawa, T.

doi:10.1109/mwsym.2009.5165791

Cited by 3 publications

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To decrease the assembly cost, each MMIC such as the oscillator and the amplifier should be integrated to a single chip. In the reported GaAs-MMICs, the HBT process, which can suppress 1/f noise, is employed for oscillators whereas the HEMT process is used for amplifiers and multipliers because of the high gain characteristics at the millimeter wave band [1][2][3][4][5][6]. As just described, an RF front-end consists of some MMICs because of different processes.…”

Section: Introductionmentioning

confidence: 99%

A Low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars

Kanaya

Amasuga

Watanabe

et al. 2010

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

Self Cite

View full text Add to dashboard Cite

To develop a low 1/f noise and high reliability InP/GaAsSb DHBT, experimental analyses on the recombination current have been carried out. The results show that the recombination current that can affect 1/f noise and reliability originates from the surface of the base. We have optimized the ledge and passivation film on the base surface of InP/GaAsSb DHBT. The optimized DHBT offers 7 dB lower 1/f noise level than the non-optimized DHBT. Additionally, in the high temperature burn-in test, no degradation has been induced even after 1,000 hr. It can satisfy the criterion of automotive radars. The W-band oscillator with the optimized DHBT delivers a remarkably low phase noise of -107 dBc/Hz at 1MHz-offset. This phase noise is 10 dB lower than that of the non-optimized HBT oscillator. These results experimentally confirm that decreasing 1/f noise is effective for the design of a low phase noise oscillator using InP/GaAsSb DHBT.To our knowledge, this is the first report to reveal that the base surface structure of InP/GaAsSb DHBT is a key factor in the improvement of reliability and phase noise.

show abstract