2016
DOI: 10.1109/tmtt.2016.2574716
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Low-Phase-Noise 54-GHz Transformer-Coupled Quadrature VCO and 76-/90-GHz VCOs in 65-nm CMOS

Abstract: This paper presents new circuit topologies and design techniques for low-phase-noise (PN) complementary metal-oxide-semiconductor (CMOS) millimeter-wave quadrature voltage-controlled oscillator (QVCO) and VCOs. A transformer-coupled QVCO topology with extra phase shift is proposed to replace the coupling transistors, which eliminates coupling transistors' noise, decouples the tradeoff between PN and phase error, and improves the PN performance. This technique is demonstrated in a millimeter-wave QVCO with a me… Show more

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Cited by 41 publications
(10 citation statements)
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“…On the other hand, the PN of QOSCs [31], especially the flicker PN, may suffer from a >10-dB degradation when compared with that of a single core [43]. Generally, active injection devices are commonly regarded as the main contributor to the flicker PN [30], [41]; however, QOSCs with passive coupling (e.g., transformer coupling with fundamental [44], [45], [46], [47], [48] or super-harmonics [32], [49], [50], or capacitive coupling [51], [52]) still exhibit poor 1/ f 3 PN. Recently, an introduction of additional capacitive coupling paths [53] in a series-coupled QVCO [22] demonstrated a low flicker PN in the single-gigahertz RF range with a balanced flicker noise injection from the switching devices.…”
Section: Table I Specifications Of Irr and Its Corresponding Evmmentioning
confidence: 99%
“…On the other hand, the PN of QOSCs [31], especially the flicker PN, may suffer from a >10-dB degradation when compared with that of a single core [43]. Generally, active injection devices are commonly regarded as the main contributor to the flicker PN [30], [41]; however, QOSCs with passive coupling (e.g., transformer coupling with fundamental [44], [45], [46], [47], [48] or super-harmonics [32], [49], [50], or capacitive coupling [51], [52]) still exhibit poor 1/ f 3 PN. Recently, an introduction of additional capacitive coupling paths [53] in a series-coupled QVCO [22] demonstrated a low flicker PN in the single-gigahertz RF range with a balanced flicker noise injection from the switching devices.…”
Section: Table I Specifications Of Irr and Its Corresponding Evmmentioning
confidence: 99%
“…The most popular structure of a VCO which is more used in CMOS technology is as follows: ring oscillators and LC tank based oscillators [13]. The most important characteristics of each VCO are phase noise, consumption power, and wide frequency tuning range [14][15][16]. In VCOs, there is a special trade-off between them.…”
Section: Introductionmentioning
confidence: 99%
“…However, over the past several years, silicon and silicon germanium (SiGe) have emerged as low cost alternatives that deliver the performance of III-V compound semiconductors. A number of RF VCOs have been reported using SiGe BiCMOS [6]- [8], and CMOS technology [9]- [11]. With rapid developments in silicon technologies, these systems become feasible to be implemented using BiCMOS or CMOS to achieve low cost, low power, and high integration.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, in an LC VCO varactor size should be carefully chosen to decrease the phase noise. At millimeter-wave frequencies, two topologies (cross- [9]) are widely used. However, it is well known that the maximum oscillation frequency of a Colpitts VCO is higher than that of a cross-coupled VCO, meaning that a Colpitts VCO can achieve relatively lower phase noise.…”
Section: Introductionmentioning
confidence: 99%