Low-Operating-Voltage Two-Dimensional Tin Perovskite Field-Effect Transistors with Multilayer Gate Dielectrics Based on a Fluorinated Copolymer

Abstract

The fabrication of organic–inorganic perovskite field-effect transistors (FETs) with polymer gate dielectrics is challenging because of the solvent corrosion and wettability issues at interfaces. A few polymers have been integrated into perovskite transistors; however, these devices have high operating voltages due to low dielectric constants. Herein, poly(vinylidenefluoride-co-trifluoroethylene) (PVDF-TrFE) with a high dielectric constant is introduced into bottom-gate phenylethylammonium tin iodide perovskite [(PEA)2SnI4] FETs. Polytetrafluoroethylene (PTFE) and cross-linked poly(4-vinylphenol) (PVP) (CL-PVP) are used to address the issues of solvent corrosion and wettability. We design the PVDF-TrFE/PTFE and PVDF-TrFE/PTFE/CL-PVP dielectric layers, where the ferroelectric properties of PVDF-TrFE are reduced by PTFE. The (PEA)2SnI4 FETs operate at relatively low gate voltages, exhibiting good overall performance with average hole mobilities of 0.42 and 0.36 cm2 V–1 s–1. Our findings provide a feasible strategy for constructing low-operating-voltage perovskite FETs with large-dielectric-constant ferroelectric polymers as gate dielectrics by a solution processing technique.

Ruddlesden–Popper Tin‐Based Halide Perovskite Field‐Effect Transistors

“…Li et al introduced copolymer dielectric layers to construct low‐operating‐voltage PEA 2 SnI 4 FETs. [ 27 ] The dielectric layers consist of the combination of polymers; poly(vinylidenefluoride ‐co ‐trifluoroethylene) (PVDF–TrFE), polytetrafluoroethylene (PTFE), and cross‐linked poly(4‐vinylphenol) (CL–PVP). PVDF–TrFE was introduced for a high dielectric constant.…”

Organic–inorganic hybrid perovskite materials and their application in transistors

“…10k and l). 151 Employing the MoO x hole-injection layer (HIL) and top-gate structure can promote hole injection and reduce the trap density. As a result, the HIL-containing FET exhibited hole mobility up to 15 cm 2 V À1 s À1 at room temperature.…”