Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure

Applied Physics Letters

Huang

et al. 2008

136

A high electron mobility transistor (HEMT)-compatible power lateral field-effect rectifier (L-FER) with low turn-on voltage is demonstrated using the same fabrication process as that for normally off AlGaN∕GaN HEMT, providing a low-cost solution for GaN power integrated circuits. The power rectifier features a Schottky-gate-controlled two-dimensional electron gas channel between the cathode and anode. By tying up the Schottky gate and anode together, the forward turn-on voltage of the rectifier is determined by the threshold voltage of the channel instead of the Schottky barrier. The L-FER with a drift length of 10μm features a forward turn-on voltage of 0.63V at a current density of 100A∕cm2. This device also exhibits a reverse breakdown voltage (BV) of 390V at a current level of 1mA∕mm and a specific on resistance (RON,sp) of 1.4mΩcm2, yielding a figure of merit (BV2∕RON,sp) of 108MW∕cm2. The excellent device performance, coupled with the lateral device structure and process compatibility with AlGaN∕GaN HEMT, make the proposed L-FER a promising candidate for GaN power integrated circuits.

mentioning

confidence: 99%

mentioning

confidence: 99%

High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors

Applied Physics Letters

Huang

et al. 2008

136

“…The forward turn-on voltages (V F, ON ) at a forward current density (J F ) 100 A/cm 2 are shown in Fig. 5(b), significantly lower than those reported in the vertical SBDs and p-i-n rectifiers rectifiers [7][8][9][10]. The much lower V F, ON is attributed to the turn-on control mechanism of the field-effect action, which is similar to the synchronous rectifier based on power MOSFET, instead of Schottky junction or p-i-n junction.…”

Section: Device Characteristicsmentioning

confidence: 66%

Monolithic integration of lateral field-effect rectifier with normally-off HEMT for GaN-on-Si switch-mode power supply converters

2008 IEEE International Electron Devices Meeting

2008

A lateral field-effect rectifier (L-FER) that can be fabricated with normally-off transistor on the same AlGaN/GaN HEMT with the same fabrication process has been demonstrated. The L-FER exhibits low turn-on voltage, low specific on-resistance and high reverse breakdown. A prototype of switch-mode dc-dc Boost converter that features monolithically integrated L-FER and normally-off HEMT is demonstrated for the first time using industry-standard GaNon-Si epitaxial wafers to prove the feasibility of GaN power inegrated technology.

“…It is noted that the device with larger drift length shows a larger positive temperature coefficient due to its dominant portion of the 2DEG drift region in the total resistance that is a more sensitive to temperature. At 250 °C, the L-FER with a drift length of 15 µm exhibits a specific on-resistance of 7.9 mΩ.cm2 and forward turn-on voltage of 1.26 V, which is still lower that those reported in SBDs and PIN diodes at room temperature [8,15,16].…”

Section: Characteristics Of L-fer At High Temperaturementioning

confidence: 73%

HEMT‐compatible lateral field‐effect rectifier using CF₄ plasma treatment

Phys. Status Solidi (c)

Chenr

2009

A HEMT‐compatible power lateral field effect rectifier (L‐FER) is reported and fabricated using the CF4 plasma treatment on a GaN‐on‐Si wafer. The power rectifier features a Schottky‐gate‐controlled two‐dimensional electron gas (2DEG) channel between the cathode and anode. By tying up the Schottky gate and anode together, the forward turn‐on voltage (VF, ON) of the rectifier is determined by the threshold voltage of the channel instead of the Schottky barrier. The L‐FER with a drift length of 15 μm features a VF, ON of 0.78 V at a current density of 100 A/cm2. This device also exhibits a reverse breakdown voltage (BV) of 460 V at a current level of 1mA/mm and a specific on‐resistance (RON, sp) of 2.3 mΩ·cm2, yielding a figure‐of‐merit (BV2/RON, sp) of 92 MW/cm2. The high temperature characteristics of the L‐FER are also investigated. The measurement results show a robust high temperature operation up to 250 °C. The excellent device performances, together with the lateral device structure and process compatibility with AlGaN/GaN HEMT, provide a low‐cost solution for GaN power integrated circuits. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)