Monolithic integration of lateral field-effect rectifier with normally-off HEMT for GaN-on-Si switch-mode power supply converters

Chen, Wanjun; Wong, King-Yuen; Chen, K.J.

doi:10.1109/iedm.2008.4796635

Cited by 44 publications

(21 citation statements)

References 10 publications

(11 reference statements)

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“…So far, there are several approaches to realize an enhancement mode operation, such as a recessed gate structure [1] [2], p-GaN gate [3][4] [5], p-AlGaN gate [6], fluoride-based plasma treatment [7], the piezoneutralization layer [8], and floating charges [9], etc. Among these different approaches, the AlGaN/GaN HEMT with either a p-GaN or p-AlGaN gate is a promising candidate for an enhancement mode device.…”

Section: Introductionmentioning

confidence: 99%

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Marcon

You

et al. 2015

IEEE Electron Device Lett.

173

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In this work, we studied the forward bias gate breakdown mechanism on Enhancement-mode p-GaN gate AlGaN/GaN HEMTs. To the best of our knowledge, it is the first time that the temperature dependency of the forward gate breakdown has been characterized. We report for the first time on the observation of a positive temperature dependency, i. e., a higher temperature leads to a higher gate breakdown voltage. Such unexpected behavior is explained by avalanche breakdown mechanism: at a high positive gate bias, electron/hole pairs are generated in the depletion region at the Schottky metal/p-GaN junction. Furthermore, at a high gate bias but before the catastrophic gate breakdown, a light emission was detected by a emission microscopy measurement (EMMI). This effect indicates an avalanche luminescence, which is mainly due to the recombination of the generated electron/hole pairs. Index Terms-p-GaN, AlGaN/GaN HEMTs, Forward bias gate breakdown, avalanche breakdown.

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Section: Introductionmentioning

confidence: 99%

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Marcon

You

et al. 2015

IEEE Electron Device Lett.

173

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“…Thus, the normally-off HEMT, which is required in the power electronics application for its inherent fail-safe operation, can be realized. The robust control on the threshold voltage of the 2DEG channel is also recently utilized to realize a lateral field-effect rectifier (L-FER) that is fully compatible with normally-off HEMTs [3,4]. The schematic cross section of the proposed platform for GaN smart power technology is shown in Fig.…”

Section: A Power Devicesmentioning

confidence: 99%

“…It is thus desirable to develop smart power chip technology with which we can implement on-chip power conditioning and protection circuits that promise to provide optimized performance, increased functionality and enhanced reliability. Up to now, based on a fluorine plasma ion implantation technology [1, 2], we have developed the key smart power components including high-voltage normally-off transistors and lateral field-effect rectifiers [3,4]. We have also demonstrated the monolithic integration of enhancement-/depletion-mode AIGaN/GaN HEMTs for direct-coupled FET logic (DCFL) circuits that operate properly up to 375°C [5,6].…”

Section: Introductionmentioning

confidence: 99%

GaN smart power chip technology

Chen

2009

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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Wide-bandgap GaN-based semiconductor materials are attracting considerable attention as the preferred material for power electronics applications, owning to t.heir supe~ior properties including high breakdown electric-field, high carrier density, high electron mobility and high saturation velocity. In this paper, the technologies for implementing GaN smart power ICs will be introduced based on the largesize, low-cost and highly scalable GaN-on-Si platform. High-voltage power components (normally-off power transistors and HEMT-compatible rectifiers) and low-voltage periphery devices for digital/analog mixed-signal circuits are successfully integrated with the same fabrication process. In particular, key analog functional blocks such as volt~ge reference generators and comparators are demonstrated usmg GaN-based technology for the first time. The optimized voltage reference generator achieved less than~O pp~C drift and can be used as a reference voltage m varIOUS biasing and sensing circuits. The temperature-dependent performance of a conventional comparator is chara~ter~ze.d and a new temperature-compensated comparator CIrCUIt IS also demonstrated. The positive limiting level of the temperature-compensated comparator is less than 450 ppmfC drift compared to 1400 ppmfC in the conventional comparator.

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“…Today, the majority of GaN power electronic devices are fabricated with hetero-epitaxial GaN on non-native substrates such as Sapphire, Silicon Carbide (SiC) or Si substrates. Monolithic integration with MOS devices [1], GaN Monolithically integrated power converters [2,3] as well as GaN smart power ICs [4,5] have also been demonstrated on the GaN-on-Si platform paving the way forward to opportunities for system level simplification of numerous power electronic applications. An important aspect of the performance assessment of monolithically integrated circuits is the presence of crosstalk amongst the otherwise isolated devices and implications of the same.…”

Section: Introductionmentioning

confidence: 98%