Low ON-Resistance (2.5 mΩ · cm<sup>2</sup>) Vertical-Type 2-D Hole Gas Diamond MOSFETs With Trench Gate Structure

Tsunoda, Jun; Iwataki, Masayuki; Horikawa, Kiyotaka; Amano, Shotaro; Ota, Kosuke; Hiraiwa, Atsushi; Kawarada, Hiroshi

doi:10.1109/ted.2021.3083568

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Cited by 10 publications

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“…Thanks to its outstanding thermal and electrical properties, diamond is expected to improve significantly the performance of the next generation of power semiconductor devices, as presented in [1,2,3]. Numerous devices have been already presented in the literature, from diamond Schottky diodes to vertical Field Effect Transistors [4,5,6,7,8,9,10,11,12,13,14,15,16,17,18]. Diamond thermal substrate can also be used solely for its highest thermal conductivity such as in [19].…”

Section: Introductionmentioning

confidence: 99%