Analytic modeling of a hybrid power module based on diamond and SiC devices

Couret, Marine; Castelan, Anne; Donato, Nazareno; Udrea, F.; Pernot, Julien; Rouger, Nicolas

doi:10.1016/j.diamond.2022.108936

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“…From this graph, it is clearly observed an increase of the output surface capacitance from 0.5 nF/cm² for the non-field-plated device to 5.5 nF/cm² for the field-plate one. Moreover, on this figure, both architectures are compared to a vertical diamond one as similarly described in [31]. In that case, the device specific onstate resistance and the output capacitance are calculated using equations ( 3) and ( 4).…”

Section: Expected Performancesmentioning

confidence: 99%