Low noise silicon micromechanical bulk acoustic wave oscillator

Kaajakari, V.; Rantakari, Pekka; Koskinen, J.K.; Mattila, T.; Kiihamäki, Jyrki; Koskenvuori, Mika; Tittonen, Ilkka; Oja, Aarne

doi:10.1109/ultsym.2005.1603091

Cited by 10 publications

(2 citation statements)

References 7 publications

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“…Microelectromechanical systems (MEMS) resonators have been focused on recently, since they can achieve a high directly vibrating frequency, 1,2) a wide bandwidth, integration with peripheral circuits on the same die, 3) and flexibility in resonant frequency tuning. 4) Various types of MEMS resonators utilizing bending modes, [5][6][7] torsional modes, 8,9) and bulk modes [10][11][12][13][14][15][16][17][18][19] have been reported. The resonant frequency for torsional modes mostly depends on only beam length.…”

Section: Introductionmentioning

confidence: 99%

High Quality Factor 80 MHz Microelectromechanical Systems Resonator Utilizing Torsional-to-Transverse Vibration Conversion

Kiso¹,

Okada²,

Fujiura³

et al. 2012

Jpn. J. Appl. Phys.

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A silicon microelectromechanical systems (MEMS) resonator utilizing torsional-to-transverse vibration conversion with quarter-wavelength torsional support beams is designed, fabricated, and evaluated. The resonant frequency for torsional modes mostly depends only on beam length, providing a large tolerance in the fabrication process. However, the following have remained critical issues: the increase in the quality factor (Q-factor) and the reduction in the motional resistance. We propose a new beam structure, in which the MEMS resonator utilizing torsional-to-transverse vibration conversion is anchored by four quarter-wavelength torsional support beams. First, the fabricated resonators are measured with a laser-Doppler (LD) vibrometer. The measured resonant frequency of 78.224 MHz has been in good agreement with the simulated one. The Q-factor has also been measured to be as high as 3.0×104 in vacuum. Then, the electrical characteristic is evaluated with an impedance analyzer. The Q-factor has been electrically measured to be as high as 3.1×104 in vacuum, which agrees well with the mechanically measured one of 3.0×104. The Q-factor has also been electrically measured to be as high as 1.3×104 at atmospheric pressure. In the measurement, a spring softening effect has been clearly observed. By increasing the DC bias voltage from 20 to 40 V, the resonant frequency has decreased by 640 Hz. The extracted motional resistance for a 0.1-µm-gap resonator has been greatly reduced to 0.039 MΩ at 5 V DC, owing to the narrow-gap effect, from that of a 0.25-µm-gap resonator. The tolerance in the fabrication process has also been evaluated and successfully verified from the measurement of the fabricated MEMS resonators.

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Section: Introductionmentioning

confidence: 99%

High Quality Factor 80 MHz Microelectromechanical Systems Resonator Utilizing Torsional-to-Transverse Vibration Conversion

Kiso¹,

Okada²,

Fujiura³

et al. 2012

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Microelectromechanical systems (MEMS) resonators have been focused upon recently, since they can provide high directly vibrating frequency, 1,2) wide bandwidth, integration with peripheral circuits on the same die, 3) and flexibility in resonant frequency tuning. 4) Until now, various types of MEMS resonators utilizing bending modes, [5][6][7] torsional modes, 8) and bulk modes [9][10][11][12][13][14][15][16][17] have been reported. The resonant frequency for the torsional modes mostly depends on only beam length.…”

Section: Introductionmentioning

confidence: 99%

Microelectromechanical Systems Resonator Utilizing Torsional-to-Transverse Vibration Conversion

Kiso

Okada

Tamano

et al. 2011

Jpn. J. Appl. Phys.

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A silicon microelectromechanical systems (MEMS) resonator utilizing the torsional-to-transverse vibration conversion is designed, fabricated and evaluated. The resonant frequency for the torsional modes mostly depends on only beam length, providing a large tolerance in the fabrication process. It has been, however, a critical issue to investigate the mechanism for generating the torsional vibration and the reduction of motional resistance. We propose a new beam structure, in which four torsion beams are vibrated by twist force generated by a transverse beam. The novel process for fabricating resonators provides a narrow gap surrounded by flat surfaces, which can reduce the motional resistance. The fabricated resonators are measured with a laser-Doppler (LD) vibrometer. The scanning function of the LD vibrometer confirms the torsional-to-transverse vibration conversion has been successfully achieved. The measured resonant frequency, 10.96 MHz, is in good agreement with the simulated one. The Q-factor has been also measured to be as high as 2.2 ×104 in vacuum. The electrical characteristic is evaluated with an impedance analyzer. At the resonant frequency, the extracted motional resistance for the 0.5-µm-gap resonator is 2.0 MΩ, which is greatly reduced, owing to the narrow gap effect, from that of the 1-µm-gap resonator. The temperature coefficient of the resonant frequency between -40 and 85 °C, has been measured to be -24.4 ppm/deg. The resonant frequency linearly decreases as the temperature rises.

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Electrostatic and RF-Properties of MEMS Structures

Tittonen¹,

Koskenvuori²

2010

Handbook of Silicon Based MEMS Materials and Technologies

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Low noise silicon micromechanical bulk acoustic wave oscillator

Cited by 10 publications

References 7 publications

High Quality Factor 80 MHz Microelectromechanical Systems Resonator Utilizing Torsional-to-Transverse Vibration Conversion

High Quality Factor 80 MHz Microelectromechanical Systems Resonator Utilizing Torsional-to-Transverse Vibration Conversion

Microelectromechanical Systems Resonator Utilizing Torsional-to-Transverse Vibration Conversion

Electrostatic and RF-Properties of MEMS Structures

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