Low-Noise Properties of Microwave Backward Diodes

Eng, S. T.

doi:10.1109/tmtt.1961.1125363

Cited by 29 publications

(6 citation statements)

References 3 publications

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“…The ficker noise increases proportionally to P 2 . The same dependancy has been reported in [14]. When expressed as S α , the flicker noise appears independant of the incoming power.…”

Section: Noise Measurementsupporting

confidence: 79%

Characterization of zero-bias microwave diode power detectors at cryogenic temperature

Giordano

Fluhr

Dubois³

et al. 2016

Review of Scientific Instruments

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We present the characterization of commercial tunnel diode low-level microwave power detectors at room and cryogenic temperatures. The sensitivity as well as the output voltage noise of the tunnel diodes is measured as functions of the applied microwave power. We highlight strong variations of the diode characteristics when the applied microwave power is higher than a few microwatts. For a diode operating at 4 K, the differential gain increases from 1000 V/W to about 4500 V/W when the power passes from -30 dBm to -20 dBm. The diode white noise floor is equivalent to a Noise Equivalent Power of 0.8 pW/Hz and 8 pW/Hz at 4 K and 300 K, respectively. Its flicker noise is equivalent to a relative amplitude noise power spectral density Sα(1 Hz) = - 120 dB/Hz at 4 K. Flicker noise is 10 dB higher at room temperature.

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“…The ficker noise increases proportionally to P 2 . The same dependancy has been reported in [14]. When expressed as S α , the flicker noise appears independant of the incoming power.…”

Section: Noise Measurementsupporting

confidence: 79%

Characterization of zero-bias microwave diode power detectors at cryogenic temperature

Giordano

Fluhr

Dubois³

et al. 2016

Review of Scientific Instruments

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“…The low threshold conduction in the reverse bias is also useful for small peak to peak signal rectification applications. Backward diodes typically provide superior temperature stability, radiation hardness, and 1/ noise performance compared to conventional diodes 26,27 .…”

Section: Introductionmentioning

confidence: 99%

“…Backward diodes typically provide superior temperature stability, radiation hardness, and 1/f noise performance compared to conventional diodes. 26,27 SnSe 2 , a tin-based transition-metal dichalcogenide, exhibits large electron affinity 28 with degenerate n-type doping. On the other hand, WSe 2 shows ambipolar behavior 29 where the characteristics can be modulated by gate voltage and contact metal.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Consequently, backward diodes find widespread applications in high-frequency switches, microwave detectors, and mixers. − The low-threshold conduction in reverse bias is also useful for small peak-to-peak signal rectification applications. Backward diodes typically provide superior temperature stability, radiation hardness, and 1/ f noise performance compared to conventional diodes. , …”

Section: Introductionmentioning

confidence: 99%

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Gate-Tunable WSe₂/SnSe₂ Backward Diode with Ultrahigh-Reverse Rectification Ratio

Krishna

Dandu

Das

et al. 2018

ACS Appl. Mater. Interfaces

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“…A backward diode is a tunnel diode (see I 3.3) whose construction has been adjusted to maximise the curvature of the I -V characteristic at the origin (Eng 1961, Shurmer 1964, Oxley 1978) (see figure 5 ) . The negative differential resistance region is not essential.…”

Section: Backward Diodesmentioning

confidence: 99%

Microwave semiconductors devices

Sitch

1985

Rep. Prog. Phys.

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The field of microwave semiconductor devices has expanded greatly in recent years, both in tHe functions that may be performed and the range of devices available for any function. Detector and mixer diodes have been available for many years, but the period of rapid growth began with the introduction of two terminal negative differential resistance diodes in the late 1950s and 1960s. The upper frequency limits of transistor operation have also marched steadily upwards, with millimetre-wave (above 30 GHz) operation being achieved in many laboratories before 1980.The stringent demands of microwave applications have made the field of microwave semiconductors a forcing house for the industry. Microwave requirements lead to fine geometries, accurately controlled doping and the use of different materials to perform different functions, sometimes within the same device. On the other hand, microwave monolithic integrated circuits are not very complex or, as yet, highly developed, most microwave integrated circuits'being of hybrid construction (discrete devices mounted in a passive circuit).The highest operating frequencies are achieved by the simplest devices ; mixer and detector diodes can work at over 1 THz, negative resistance diodes at a few hundred GHz, while transistors are limited to under 100 GHz at present. Future developments will exploit the properties of heterostructures in which different parts of the device are made from different semiconductor materials.The aim of this review is to provide an introduction for those new to microwave semiconductors and an update for those who have not been closely involved for some time. Following the introduction is a section on carrier transport, which is a topic of great importance in the understanding of device operation. The individual families of devices are discussed in the succeeding sections, starting with varistor and varactor diodes in which the variation of resistance or reactance is the important feature. The next section introduces transit-time phenomena and the devices designed to take advantage of them. Transit-time semiconductor devices are not widely used outside the microwave bands whereas transistors, the subjects of the next two sections, are used in virtually every electronic assembly. The appendix serves to briefly describe fabrication technology, which has a great influence on the performance and cost of microwave semiconductor devices.

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Low-Noise Properties of Microwave Backward Diodes

Cited by 29 publications

References 3 publications

Characterization of zero-bias microwave diode power detectors at cryogenic temperature

Characterization of zero-bias microwave diode power detectors at cryogenic temperature

Gate-Tunable WSe₂/SnSe₂ Backward Diode with Ultrahigh-Reverse Rectification Ratio

Microwave semiconductors devices

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Low-Noise Properties of Microwave Backward Diodes

Cited by 29 publications

References 3 publications

Characterization of zero-bias microwave diode power detectors at cryogenic temperature

Characterization of zero-bias microwave diode power detectors at cryogenic temperature

Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

Microwave semiconductors devices

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Gate-Tunable WSe₂/SnSe₂ Backward Diode with Ultrahigh-Reverse Rectification Ratio