Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates

Zhang, Yun; Shen, Shyh‐Chiang; Kim, Hee Jin; Choi, Suk Soon; Ryou, Jae‐Hyun; Dupuis, R. D.; Narayan, Bravishma

doi:10.1063/1.3148812

Cited by 67 publications

(31 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4, the NEP is 1.1×10 -17 (W-Hz -0.5 ) and peak D*> 1.2×10 14 (cm-Hz 0.5 -W -1 ) at V CE = 1 V, where the dark current reaches its minimum. The noise and detectivity performance of the fabricated HPT are comparable to stateof-the-art III-N p-i-n diodes reported to date [2]. The III-N HPT presented in this paper shows the feasibility for high-responsivity and low-noise UV detection applications.…”

supporting

confidence: 69%

See 1 more Smart Citation

Performance Evaluation of GaN/InGaN Heterojunction Phototransistors

et al. 2015

View full text Add to dashboard Cite

We present a high-performance InGaN/GaN heterojunction phototransistor with the responsivity (R λ )> 8 (A/W), low noise-equivalent-power (NEP)< 1.1×10 -17 (W-Hz -0.5 ) and high detectivity (D*)> 1.2×10 14 (cm-Hz 0.5 -W -1 ). OCIS codes: (040.7190) Ultraviolet; (040.5160) Photodetector; (040.6070) Solid-State Detectors.Photodetectors (PDs) based on III-Nitride (III-N)-based platforms have numerous advantages for ultra-violet (UV) radiation detection, including low dark current density, high breakdown field, better chemical resistance and wider operational temperature range. To date, high-performance UV PDs, such as III-N p-i-n diodes, avalanche photodetectors (APDs), and metal-semiconductor-metal (MSM) detectors have been widely reported [1][2][3][4][5]. On the other hand, phototransistors serve as another choice for UV PDs because they are expected to provide high gain transistor action. In the past, phototransistors based on lower bandgap materials have been demonstrated for infrared detection and fiber-optic communications [6]. However, since photocurrent gains in phototransistors are essentially related to the epitaxial material quality of the constituent bipolar transistor structures, fewer developments in III-Nbased phototransistors were reported [7,8].In this paper, we report a top-illuminated InGaN/GaN heterojunction phototransistor (HPT) grown on sapphire substrates. The HPT layer structure consists of a 2.5-μm-thick unintentionally doped GaN buffer layer, followed by a 880-nm Si-doped n-GaN sub-collector layer (n=3×10 18 cm -3 ), a 320-nm n-GaN collector layer (n= 1×10 17 cm -3 ), a 30-nm In x Ga 1-x N (x= 0-0.03) graded collector layer, a 110-nm Mg-doped In 0.03 Ga 0.97 N base layer (p~ 1×10 18 cm -3 ), a 30-nm In x Ga 1-x N (x=0.03-0) graded emitter layer and a 120-nm Si-doped n-GaN cap layer (n= 1×10 19 cm -3 ). The device fabrication starts with the mesa formation to expose the sub-collector layer using an ICP dry etching tool. After ICP etching, Ti-based ohmic contacts are used for both emitter and collector contacts. As shown in Fig. 1, under the dark condition, the leakage current density is <10 -7 (A/cm 2 ) at V CE = 3 V and <10 -5 (A/cm 2 ) at V CE = 10 V. These results represent the lowest dark current density reported to date for III-N HPTs in the same bias range [7,8], indicating high-quality epitaxial layers were achieved. Figure 2 shows the spectral response of the HPT biased at V CE = 5 V. The device under test was illuminated from the top at the selected optical wavelengths. The inset of Fig. 2 shows a cross-sectional view of the fabricated HPT. The data show that the HPT responds to photons with λ< 410 nm and the photocurrent (I C(opt) ) peaks at λ~ 373 nm with a cutoff wavelength at λ= 410 nm. Figure 3 shows the measured I C(opt) as a function of V CE for the fabricated device under different optical power density (P opt ) illumination. As the UV light (λ= 373 nm) is illuminated on the transistor, I C(opt) remains approximately constant for a fixed input optical power. Figure 4 shows th...

show abstract

supporting

confidence: 69%

“…To date, high-performance UV PDs, such as III-N p-i-n diodes, avalanche photodetectors (APDs), and metal-semiconductor-metal (MSM) detectors have been widely reported [1][2][3][4][5]. On the other hand, phototransistors serve as another choice for UV PDs because they are expected to provide high gain transistor action.…”

mentioning

confidence: 99%

Performance Evaluation of GaN/InGaN Heterojunction Phototransistors

et al. 2015

View full text Add to dashboard Cite

show abstract

“…As expected, the shot noise from the dark current is the major contribution to the noise. The D of the device is 5.31 × 10 12 cm Hz 1 ∕ 2 ∕ W at −1 V. The D of the PD is lower than that of GaN photodiodes [4] due to the high dark current originating from impurities and defects during the deposition of NPB, but it is higher than that of OPDs [14,26].…”

mentioning

confidence: 92%

“…Photomultipliers need an ultra-high vacuum environment with a high operating voltage [3]. Considering the need for low-cost, low-voltage supply and high efficiency in practical application, wide bandgap semiconductors have received more and more attention, such as GaN [4], SiC [5], and MgZnO [6]. Among them, MgZnO has been studied extensively in recent years.…”

mentioning

confidence: 99%

Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction

Hu¹,

Li²,

Zhu³

et al. 2012

Opt. Lett.

View full text Add to dashboard Cite

An ultraviolet photodetector was fabricated based on Mg0.07Zn0.93O heterojunction. N, N'-bis (naphthalen-1-y1)-N, N'-bis(pheny) benzidine was selected as the hole transporting layer. I-V characteristic curves of the device were measured in the dark and under the illumination of 340 nm UV light with density of 1.33 mW/cm2. The device showed a low dark current of about 3×10(-10) A and a high photo-dark current ratio of 1×10(5) at -2 V bias. A narrowband photoresponse was observed from 300 to 400 nm and centered at 340 nm with a full width at half-maximum of only 30 nm. The maximum peak response is at 340 nm, which is 0.192 A/W at the bias of -1 V.

show abstract

“…Ultraviolet (UV) photodetectors with excellent thermal stability and reliability have drawn a great deal of interest in recent years due to their various potential applications in the fields of solar astronomy, short-range communications security, biological research, fire alarms, and military services [1][2][3][4]. Conventional semiconductors such as silicon and gallium arsenide can be used in UV detection, but they exhibit poor radiation hardness and have high dark currents with increasing bias owing to their narrow bandgap [5].…”

Section: Introductionmentioning

confidence: 99%

High-sensitivity SrTiO₃ photodetectors with paralleled multiple interdigital electrode cells

et al. 2013

View full text Add to dashboard Cite

We report high-sensitivity SrTiO(3) photoconductive detectors with multiple photoelectric cells connected in parallel. The photocurrent of the detectors increases significantly with an increase of the cell number. The photocurrent responsivity of the detector with three cells can reach 237 mA/W at 10 V bias under illumination of the 375 nm laser, and the corresponding quantum efficiency is 77% at 10 V bias. Furthermore, a transient photovoltaic signal with a rise time of ~490 ps and a full width at half-maximum of ~900 ps is obtained. These results demonstrate that the present devices with further improvement of performance have great potential application in high-sensitivity and ultrafast ultraviolet photodetectors.

show abstract

Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates

Cited by 67 publications

References 14 publications

Performance Evaluation of GaN/InGaN Heterojunction Phototransistors

Performance Evaluation of GaN/InGaN Heterojunction Phototransistors

Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction

High-sensitivity SrTiO₃ photodetectors with paralleled multiple interdigital electrode cells

Contact Info

Product

Resources

About

Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates

Cited by 67 publications

References 14 publications

Performance Evaluation of GaN/InGaN Heterojunction Phototransistors

Performance Evaluation of GaN/InGaN Heterojunction Phototransistors

Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction

High-sensitivity SrTiO3 photodetectors with paralleled multiple interdigital electrode cells

Contact Info

Product

Resources

About

High-sensitivity SrTiO₃ photodetectors with paralleled multiple interdigital electrode cells