Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi₂S₃ Nanowire

Abstract

With the increasing demand for detection accuracy and sensitivity, dual-band polarimetric image sensor has attracted considerable attention due to better object recognition by processing signals from diverse wavebands. However, the widespread use of polarimetric sensors is still limited by high noise, narrow photoresponse range, and low linearly dichroic ratio. Recently, the low-dimensional materials with intrinsic in-plane anisotropy structure exhibit the great potential to realize direct polarized photodetection. Here, strong anisotropy of 1D layered bismuth sulfide (Bi 2 S 3 ) is demonstrated experimentally and theoretically. The Bi 2 S 3 photodetector exhibits excellent device performance, which enables high photoresponsivity (32 A W −1 ), I on /I off ratio (1.08 × 10 4 ), robust linearly dichroic ratio (1.9), and Hooge parameter (2.0 × 10 −5 at 1 Hz) which refer to lower noise than most reported low-dimensional materials-based devices. Impressively, such Bi 2 S 3 nanowire exhibits a good broadband photoresponse, ranging from ultraviolet (360 nm) to short-wave infrared (1064 nm). Direct polarimetric imaging is implemented at the wavelengths of 532 and 808 nm. With these remarkable features, the 1D Bi 2 S 3 nanowires show great potential for direct dual-band polarimetric image sensors without using any external optical polarizer.

Polarization-sensitive photodetectors based on main group layered low-dimensional semiconductors

“…Distribution of layered semiconductors based on Group V antimony and bismuth series in the periodic table; (b) The atoms of orthorhombic Sb2S3 crystal are layered along the a-axis, and there exists anisotropy in the b-c plane (reproduced with permission [22] , Copyright 2020 Wiley-VCH GmbH); (c) The atoms of the orthorhombic Bi2S3 crystal are distributed in layers along the c-axis direction, and there is anisotropy in the a-b plane (Open Access) [23] ; (d) The atoms of the trigonal SbI3 crystal are distributed in layers along the a-axis (reproduced with permission [24] , Copyright 2020, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim); (e) Atomic arrangement of orthorhombic Sb2(Se0.33S0.67)3 (reproduced with permission [25] , Copyright . 2021, IEEE).…”

“…2021, IEEE). 该方案通过核壳形式建立异质结降低内核材料 SbI 3 的对称性，从而提升偏振光探测性能，与其 他研究者们通过建立面内范德瓦尔斯异质结或者二维材料和体材料相结合的异质结形式来提高 偏振探测性能具有相同的作用 [47] 。 图 4 基于Ⅴ族锑系和铋系的层状半导体偏振探测(a)基于 Sb2S3 的偏振光探测器在整个可见光波段具有较好的响应度 (黑色虚线)以及高各向异性光电流比(红色虚线) [22] ；( b)基于 Bi2S3 的宽光谱偏振光探测器具有低的噪声(Hooge 参量接近 10 -5 ) [23] ；( c)通过合金化手段制备 Sb2(Se1-xSx)3 合金半导体提升偏振探测性能(x 代表 S 和 Se 元素中 S 的百 分比) [25] ;(d)通过核壳纳米线结构降低核层半导体的对称性 [24] 。 Figure 4 Polarized photodetection based on Group Ⅴ antimony and bismuth systems (a) The Sb2S3-based polarization photodetector exhibits wide photo response in the whole visible light (black dotted line) and high anisotropic photocurrent ratio (red dotted line) (reproduced with permission [22] , Copyright 2020 Wiley-VCH GmbH); (b) The Bi2S3-based broad-spectrum polarization photodetector shows low noise with the Hooge parameter as low as nearly 10 -5 ) (Open Access) [23] ; (c) The alloy semiconductor Sb2(Se1-xSx)3 improves the polarization photodetection performance (x represents the percentage of S in S and Se elements) (reproduced with permission [25] , Copyright . 2021, IEEE); (d) Symmetry-Reduction of the core semiconductor through the core-shell nanowire structure (reproduced with permission [24] , Copyright 2020, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim).…”

“…同时，本课题组通过合金化的手段发展了宽光谱 Sb 2 (Se 0.33 S 0.67 ) 3 偏振光探测器 [25] 。以高纯度 锑粉，硫粉以及硒粉为前驱体，通过 CVD 方法合成 Sb-S-Se 合金纳米线，硫粉和硒粉位于上游 低温区 (100-250℃) ， 锑粉位于中游高温区 (620-640℃) ， 氧化硅衬底位于下游低温区 (400-500℃) 。 和 Bi 2 S 3 为像元进行红外以及可见光波段的偏振成像。 图 5 基于主族层状半导体的偏振成像(a)以 Bi2S3 探测器为像元的成像系统成像结果，左图为实物，右图为成像结果 [23] ； (b)以 Sb2S3 探测器为像元对镂空实物"UCAS"的可见光偏振成像结果("UCAS 为中国科学院大学的英文首字母") [22] ； (c)以 GeSe 探测器为像元对偏振 U 型热发光管进行近红外偏振成像，将具有不同偏振角(0°到 90°)的 U 型管的成像 结果按照灰度值的高度分布绘制 [20] 。 Figure 5 Polarization Imaging based on main group layered semiconductors (a) Imaging results of the imaging system with Bi2S3 photodetectors, the left picture is the object, and the right picture is the imaging result (Open Access) [23] ; (b) The visible light polarization imaging results of the hollow object "UCAS" with the Sb2S3 photodetector ("UCAS is the English acronym of the University of Chinese Academy of Sciences") (reproduced with permission [22] , Copyright 2020, Wiley-VCH GmbH); (c) The near-infrared polarization imaging of the polarized U-shaped thermoluminescent tube is performed with the GeSe photodetector, and the imaging results of the U-shaped tube with different polarization angles (0°-90°) are drawn according to the height distribution of gray values. (reproduced with permission, Copyright 2020 [20] , Science China Press and Springer-Verlag GmbH Germany).…”

“…该二维成像系统仅需要一个像元便可实现清晰成像图 5(a)所示，左图为实物图，右图为以 Bi 2 S 3 探测器为像元进行二维扫描式成像，结果非常清晰的呈现了实物的细节 [23] 。此二维扫描成 像系统主要包括可调焦式透镜组、集成电路信息采集组、电动旋转台以及电脑主机和显示器。探 果，因此 90°的成像结果并未表现出来 [22] 。该"UCAS"实物为一白光实物，证明 Sb…”

“…其中 S I 代表噪声频谱，I 代表电流，f 代表频率，N 代表载流子密度，α H 为 Hooge 参量，数 值越小，代表器件的噪声越小 [55] 。如图 4(b)所示，相较于其余一维探测器，Bi 2 S 3 探测器具有较 低的噪声，Hooge 参量接近于 10 -5 [23] 。 图 3 Ⅴ族锑系和铋系层状半导体的原子排列图(a)基于Ⅴ族锑系和铋系的层状半导体在元素周期表中的分布； (b)正 交晶系的 Sb2S3 晶体的原子沿着 a 轴层状分布，b-c 面内具有各向异性 [22] ；( c)正交晶系的 Bi2S3 晶体的原子沿着 c 轴方 向层状分布， a-b 面内具有各向异性 [23] ； ( d) 三方晶系的 SbI3 晶体的原子沿着 a 轴层状分布 [24] ； ( e) 正交晶系 Sb2(Se0.33S0.67)3 的原子排列 [25] 。…”