Low-noise and high-power GaAs microwave field-effect transistors prepared by molecular beam epitaxy

Abstract

The low-noise FET’s prepared on molecular-beam-epitaxial (MBE) layers have a noise figure of 1.9 dB with a corresponding gain of 11 dB at 6 GHz. The power FET’s can produce 1.3 W at 4.4 GHz (1-dB compression) with a gain of 10 dB and a power-added efficiency of 35%. The influence of substrate preparation on Hall mobility for very thin layers was also studied and there is no evidence of Cr diffusion from the substrate at the MBE growth temperature.

Relationship of MBE growth parameters with the electrical properties of thin (100) InAs epilayers

“…Molecular beam epitaxy (MBE) (Cho and Arthur 1975) has been developed from surface studies on GaAs (Cho 1969(Cho , 1970b(Cho , 1971 to include the deposition of various epitaxial layers (Arthur and LePore 1969, Matsushima et a1 1976, Chang et al 1977, Yano et a1 1977 and the fabrication of microwave (Cho et a1 1974, 1977b, Wood 1976) and electrooptic devices (Cho et al 1976(Cho et al , 1977a. There is little reported work, however, on the relationship between the MBE growth conditions and the electrical properties of the deposited layers, a knowledge of which would lead to more controlled and reproducible device performance.…”