Relationship of MBE growth parameters with the electrical properties of thin (100) InAs epilayers

Grange, J. D.; Parker, E. H. C.; King, R

doi:10.1088/0022-3727/12/9/023

Cited by 22 publications

(5 citation statements)

References 41 publications

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“…Surface/interface roughness scattering is also very pronounced. This leads to a much lower electron mobility in the accumulation layer than in the bulk, in the range of 5 000 to 14 000 cm 2 V −1 s −1 [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Properties of InAs/InAlAs heterostructures

Affentauschegg¹,

Wieder²

2001

Semicond. Sci. Technol.

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InAs is the only binary III-V compound semiconductor that exhibits a natural surface accumulation due to the high density of donor surface states. The Fermi level is pinned at any surface of an InAs wafer, regardless of orientation. It is therefore very likely that an accumulation layer is present at both the top and bottom surface or interface of a thin InAs epilayer with an intermediate bulk-like region between them. Epitaxial layers of InAs sandwiched between two 30 nm thick layers of In 0.8 Al 0.2 As or In 0.52 Al 0.48 As were grown on InP substrates by solid-source molecular beam epitaxy. Their static and dynamic properties were determined by means of gated Hall, resistivity and C-V measurements using a three-layer model to account for interface accumulation as well as the residual bulk-like intermediate region. The InAs/In 0.8 Al 0.2 As heterojunction interface has a significantly lower density of interface states than that of the In 0.52 Al 0.48 As/InAs interface. It is possible to drive such a structure from accumulation through flat band into depletion by means of moderate negative gate voltages. Using similar measurements, the effect of the thickness of the InAs layer as well as the presence or absence of a step-graded buffer on the density of surface states was determined.

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Section: Introductionmentioning

confidence: 99%

Properties of InAs/InAlAs heterostructures

Affentauschegg¹,

Wieder²

2001

Semicond. Sci. Technol.

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“…After etching step by step Grange et al [1] obtained a 1 m InAs MBE layer with the concentration profile shown in Figure 2 ( ). Near the interface with the GaAs substrate, the researchers measured the concentration to be as high as = 1 ⋅ 10 18 /cm 3 .…”

Section: Two Layer Modelmentioning

confidence: 99%

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Wolkenberg

2013

Journal of Materials

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An electrical conduction versus temperature model using a Hall device was developed. In the case of InAs, InGaAs, and GaAs MBE epilayers, the prediction agrees well with the experimental results. Herein, we explain here how these calculated fractions of total conductivity describe the measured values. The method allows for the calculation of the carrier concentration and mobility of each component of a multicarrier system. The extracted concentrations are used to characterise the different components of charge transport in the active layer. The conductance values G [S] of these components of charge transport were obtained. Also the scattering events for the investigated samples are presented. The analysis of the experimental results for three semiconductor compositions and different concentrations demonstrates the utility of our method in comparing the conductance of each component of the multilayered system as a function of temperature.

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“…Examination of the NH 4 OH:H 2 0:H 2 O-based solutions revealed no detectable etch. Because NH 4 OH and other bases are often used in photoresist developing solutions, we did not use the NH 4 OH pre-evaporation etch in subsequent processing in order to preserve the small lithographic dimensions of microwave devices. …”

Section: Chemical Etchingmentioning

confidence: 99%

“…Also, earlier MBE papers refer to the oxygen donor possibility [4]. They report improved electrical properties using a different arsenic source that did not oxidize.…”

Section: Sims Analysismentioning

confidence: 99%

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InAs Device Process Development and Characterization

Ikossi¹

2003

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Standard Form 298 (Rev. 8-98)Prescribed by ANSI Std. Z39.18Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) SPONSOR / MONITOR'S ACRONYM(S) 9. SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) SPONSOR / MONITOR'S REPORT NUMBER(S) 202-404-4623This report summarizes the results of the initial effort in InAs bipolar device development. InAs is one of the III-V semiconductor materials exhibiting a relatively small energy bandgap and extremely high electron mobility, properties both desirable for high-frequency, low-power dissipation device applications. The major accomplishment of this work is the development of a robust device fabrication process that can be directly transferred to an industrial environment. Ti/Pt/Au was used as a universal n-and p-type contact with record low contact resistances. For the base access etch, which is one of the critical issues for bipolar device processing, a unique doping dependence etch was discovered for InAs that allows the base access etch to stop at the appropriate layer. The low-bandgap InAs and heavy doping resulted in premature breakdown through current tunneling and uncontrollable reverse leakage current. This effect was addressed successfully through interactive MBE growth, device characterization, and material analysis techniques. Pn junctions, the building blocks for bipolar transistors were produced with reverse leakage current as low as 10 mA at -1 V and breakdown voltages as high as 6.5 V. The InAs pn junctions produced had promising rectifying diode characteristics for low-voltage operation and high-speed current amplifier applications.

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Relationship of MBE growth parameters with the electrical properties of thin (100) InAs epilayers

Cited by 22 publications

References 41 publications

Properties of InAs/InAlAs heterostructures

Properties of InAs/InAlAs heterostructures

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

InAs Device Process Development and Characterization

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