Low-Noise Amplifier for Next-Generation Radio Astronomy Telescopes: Review of the State-of-the-Art Cryogenic LNAs in the Most Challenging Applications

Chiong, Chau-Ching; Wang, Yunshan; Chang, Kai‐Chun; Wang, Huei

doi:10.1109/mmm.2021.3117318

Cited by 8 publications

(1 citation statement)

References 58 publications

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“…Thus, the LNA performance affects the overall receiver sensitivity and linearity [ 2 , 7 , 8 ]. Not many works are available in the literature that report LNA implementations achieving a NF below 1.5 dB with a gain above 30 dB and low Input Return Loss (IRL or | S 11 |) [ 4 , 5 , 9 , 10 , 11 , 12 , 13 ].…”

Section: Introductionmentioning

confidence: 99%

A 2-V 1.4-dB NF GaAs MMIC LNA for K-Band Applications

Galante-Sempere

Khemchandani

Pino

2023

Sensors

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A 1.4-dB Noise Figure (NF) four-stage K-band Monolithic Microwave Integrated Circuit (MMIC) Low-Noise Amplifier (LNA) in UMS 100 nm GaAs pHEMT technology is presented. The proposed circuit is designed to cover the 5G New Release n258 frequency band (24.25–27.58 GHz). Momentum EM post-layout simulations reveal the circuit achieves a minimum NF of 1.3 dB, a maximum gain of 34 dB, |S11| better than –10 dB from 23 GHz to 29 GHz, a P1dB of –18 dBm and an OIP3 of 24.5 dBm. The LNA draws a total current of 59.1 mA from a 2 V DC supply and results in a chip size of 3300 × 1800 µm2 including pads. We present a design methodology focused on the selection of the active device size and DC bias conditions to obtain the lowest NF when source degeneration is applied. The design procedure ensures a minimum NF design by selecting a device which facilitates a simple input matching network implementation and obtains a reasonable input return loss thanks to the application of source degeneration. With this approach the input matching network is implemented with a shunt stub and a transmission line, therefore minimizing the contribution to the NF achieved by the first stage. Comparisons with similar works demonstrate the developed circuit is very competitive with most of the state-of-the-art solutions.

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Section: Introductionmentioning

confidence: 99%

A 2-V 1.4-dB NF GaAs MMIC LNA for K-Band Applications

Galante-Sempere

Khemchandani

Pino

2023

Sensors

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Carbon-based cryoelectronics: graphene and carbon nanotube

Deng,

Kang,

Zhang

2023

Chip

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Self-heating of cryogenic high electron-mobility transistor amplifiers and the limits of microwave noise performance

Choi

Gabritchidze

et al. 2022

Journal of Applied Physics

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The fundamental limits of the microwave noise performance of high electron-mobility transistors (HEMTs) are of scientific and practical interest for applications in radio astronomy and quantum computing. Self-heating at cryogenic temperatures has been reported to be a limiting mechanism for the noise, but cryogenic cooling strategies to mitigate it, for instance, using liquid cryogens, have not been evaluated. Here, we report microwave noise measurements of a packaged two-stage amplifier with GaAs metamorphic HEMTs immersed in normal and superfluid [Formula: see text]He baths and in vacuum from 1.6 to 80 K. We find that these liquid cryogens are unable to mitigate the thermal noise associated with self-heating. Considering this finding, we examine the implications for the lower bounds of cryogenic noise performance in HEMTs. Our analysis supports the general design principle for cryogenic HEMTs of maximizing gain at the lowest possible power.

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Low-Noise Amplifier for Next-Generation Radio Astronomy Telescopes: Review of the State-of-the-Art Cryogenic LNAs in the Most Challenging Applications

Cited by 8 publications

References 58 publications

A 2-V 1.4-dB NF GaAs MMIC LNA for K-Band Applications

A 2-V 1.4-dB NF GaAs MMIC LNA for K-Band Applications

Carbon-based cryoelectronics: graphene and carbon nanotube

Self-heating of cryogenic high electron-mobility transistor amplifiers and the limits of microwave noise performance

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