Low-noise 13  μm InAs/GaAs quantum dot laser monolithically grown on silicon

Liao, Mengya; Chen, Siming; Liu, Zhixin; Wang, Yi; Ponnampalam, Lalitha; Zhou, Zichuan; Wu, Jiang; Tang, Mingchu; Shutts, Samuel; Liu, Zizhuo; Smowton, Peter M.; Yu, Siyuan; Seeds, A.J.; Liu, Huiyun

doi:10.1364/prj.6.001062

Cited by 43 publications

(17 citation statements)

References 24 publications

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“…In addition, an ultra-low relative intensity noise (RIN) (< -150 dB/Hz) was measured in the range of 4 -16 GHz. Based on these excellent noise characteristics, 25.6 Gb/s data transmission over 13.5 km SMF-28 has been demonstrated [49]. This low-noise QD laser shows promise for future inter/hyper data-centre interconnection.…”

Section: Fp Lasers On Offcut Si Substratementioning

confidence: 95%

Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

et al. 2019

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In the past few decades, numerous high-performance silicon (Si) photonic devices have been demonstrated. Si, as a photonic platform, has received renewed interest in recent years. Efficient Si-based III-V quantum-dot (QDs) lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of III-V compounds. Although the material dissimilarity between III-V material and Si hindered the development of monolithic integrations for over 30 years, considerable breakthroughs happened in the 2000s. In this paper, we review recent progress in the epitaxial growth of various III-V QD lasers on both offcut Si substrate and on-axis Si (001) substrate. In addition, the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.

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Section: Fp Lasers On Offcut Si Substratementioning

confidence: 95%

Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

et al. 2019

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“…The InAs QDs are embedded in 8 nm In0.15Ga0.85As quantum wells (QWs) and show a dot density of 3 × 10 10 cm -2 . More information on the growth can be found in [3]. The finished wafers are fabricated into 2.5 mm × 2.2 m narrow ridge-waveguide lasers and the thinned laser bars are mounted on a copper heatsink.…”

Section: Epitaxial Structure and Device Layoutmentioning

confidence: 99%

Dynamics of Quantum Dot Lasers on Silicon

Hantschmann

Vasil'ev

Chen

et al. 2019

2019 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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“…To realize single transverse mode and low threshold current of Si-based light source, 2.2 μm width narrow ridge waveguide InAs/GaAs QD laser devices with 95% high reflection coating were fabricated [5]. Fig.2 (a) shows the LIV measurement of a 2.2 μm × 2.5 mm Si-based narrow-ridge-waveguide laser device.…”

Section: Low Noise 1300 Nm Inas/gaas Qd Laser Grown On Silicon With Nmentioning

confidence: 99%

Roadmap of 1300-nm InAs/GaAs quantum dot laser grown on silicon for silicon photonics

Liu

Liao

Hantschmann

et al. 2019

International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA)

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Low-noise 13 μm InAs/GaAs quantum dot laser monolithically grown on silicon

Cited by 43 publications

References 24 publications

Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

Dynamics of Quantum Dot Lasers on Silicon

Roadmap of 1300-nm InAs/GaAs quantum dot laser grown on silicon for silicon photonics

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