Low MOCVD growth temperature controlled phase transition of Ga2O3 films for ultraviolet sensing

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga2O3 films by introducing Zn impurity

“…Moreover, after switching off the light, the current of the Zn-doped e-Ga 2 O 3 solar-blind UV photodetector could completely recover to its initial dark state within 20 s, which is much better than that of the most early reported solar-blind UV photodetectors. 13,15,[49][50][51] The normalized transient photoresponse of the photodetector measured using an LED (255 nm) light source with different modulation frequencies of 0.1, 1, 10 and 100 Hz are shown in Fig. 4.…”

“…Moreover, after switching off the light, the current of the Zn-doped ε-Ga 2 O 3 solar-blind UV photodetector could completely recover to its initial dark state within 20 s, which is much better than that of the most early reported solar-blind UV photodetectors. 13,15,49–51…”

“…[9][10][11][12] Ga 2 O 3 has six different crystal structures, including a-, b-, g-, d-, e-, and k-Ga 2 O 3 . [14][15][16][17] Among them, the most stable crystal structure is b-Ga 2 O 3 , 18,19 whereas e-Ga 2 O 3 is the metastable phase second only to b-Ga 2 O 3 . 20,21 Compared to b-Ga 2 O 3 , e-Ga 2 O 3 has a similar wide bandgap (B4.9 eV), higher lattice symmetry, lower anisotropic crystal structure, and lower growth temperature.…”

Regulation of oxygen vacancies in nitrogen-doped Ga2O3 films for high-performance MSM solar-blind UV photodetectors

“…Each phase possesses a different bandgap, which can be utilized in various types of SBPDs. 8,9 The Ga 2 O 3 -based solar-blind photodetectors exhibit high radiation hardening, thermal and chemical stability, low background noise sources and antijamming ability for harsh environment applications. [10][11][12][13] Furthermore, it is an attractive material for the preparation of SBPDs with the characteristics of large detectivity, high responsivity and sensitivity.…”

Influence of Oxygen on Ga2O3 Deposition at Low Temperature by MOCVD

“…Currently, Yue et al have successfully utilized MOCVD to grow pure β-phase, pure ε-phase, and mixed-phase gallium oxide films on sapphire. 22 The growth and preparation process of single-crystal Ga 2 O 3 materials is relatively mature, while polycrystalline Ga 2 O 3 materials have been reported less frequently. 6H-SiC substrates via MOCVD.…”