Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design

Buda, M.; Hay, J. B.; Tan, Hark Hoe; Wong‐Leung, Jennifer; Jagadish, Chennupati

doi:10.1109/jqe.2003.810270

Cited by 36 publications

(21 citation statements)

References 17 publications

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“…So improve the quantum efficiency, and increase the stability and the lifetime of the device [3]. Heterojunction confine the carrier capabilities related to its barrier height, the junction temperature and other factors.…”

Section: Resultsmentioning

confidence: 99%

High power asymmetric 980nm broad-waveguide diode lasers with current blocking layer

Wang

Chen

et al. 2012

2012 International Conference on Optoelectronics and Microelectronics

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To avoid the catastrophic optical mirror damage (COMD), the value of equivalent transverse spot size has increased to 0.83 m through decreasing optical confinement factor ( ) for quantum well diode lasers, which further reduces the power density on the facet. The design of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers with current blocking layer is designed for high-power, single-transversemode operation experimentally, which prevents carrier leakage and increases electro-optical conversion efficiency. According to the calculation result, for the device with uncoated 100-m-wide stripes, 2-mm-long lasers exhibit a threshold-current density of 290A/cm 2 , the maximum output power is 1.19W with operating current of 2.0 A. The corresponding internal loss coefficient and differential quantum efficiency are 1.6 cm -1 and 63% respectively. Keywords-laser diode; high power; asymmetric broad waveguide; current blocking layer; equivalent transverse spot size

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Section: Resultsmentioning

confidence: 99%

High power asymmetric 980nm broad-waveguide diode lasers with current blocking layer

Wang

Chen

et al. 2012

2012 International Conference on Optoelectronics and Microelectronics

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“…This was attributed to the high mechanical strength of the Au/Sn solder 17,18 and the strong adhesion properties of the Ti/Pt/Au metallization. 19 LDs bonded in this region could achieve an optical output of 150-160 mW. The external efficiency of these LDs was observed to be stable without any thermal influence on or disturbance to the abovethreshold characteristics (Fig.…”

Section: Optimal Bonding Windowmentioning

confidence: 90%

Influence of Bonding Temperature and Applied Load on the Bonding Integrity and Optical Performance of Face-Down Bonded Ridge-Waveguide Lasers

Teo

Wang

Shi

et al. 2007

Journal of Elec Materi

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The effects of bonding temperature and applied load on the mechanical integrity of 80Au-20Sn solder joints and the optical performance of laser diodes (LDs) are presented. Insufficient solder wetting at 280°C and poor joint integrity at an applied load below 0.196 MPa resulted in solder failure during die shear test. As the bonding temperature and applied load increased, the joint integrity and the optical performance improved. Shear testing further showed fracture in the LD due to the high mechanical strength of 80Au-20Sn solder and good adhesion properties of the solder joint. Microstructure studies showed good metallurgical stability with little interfacial intermetallic compound (IMC) formed. However, beyond an applied load of 0.523 MPa, the LD performances degraded due to modification of the bandgap energy in the active region. From our experimentation, a bonding window with good bonding integrity and high optical performance was, nevertheless, achieved.

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“…The cavity consists of a gold-clad PhC membrane with a dielectric thickness of around 1 m (optically thick). The gold layers act as highly reflective electrical contacts, a combination that can be achieved with nonalloyed Au contacts [10]. Cavity diameters can go down to less than 30 m. This band-edge laser can be useful for integration purposes of electronic and photonic functions, for which there can be a need for tradeoff between emitted power and compactness.…”

Section: Band-edge Lasing In Gold-cladmentioning

confidence: 99%

Band-edge lasing in gold-clad photonic-crystal membranes

Campenhout

Bienstman

Baets

2005

IEEE J. Select. Areas Commun.

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Abstract-We investigate the possibility to achieve band-edge lasing in optically thick gold-clad photonic-crystal (PhC) membranes, with a dielectric thickness of around 1 m. We have performed a two-dimensional eigenmode-expansion analysis of band-edge resonators in one-dimensional PhCs. Material thresholds, quality factors, and emission efficiencies have been calculated for TE band-edge laser resonances on the second and third 0-point. The second 0-point sustains band-edge laser modes with quality factors above 2500 for a membrane thickness of 1 m and a cavity length of 20 periods, however, with a very poor surface-emission efficiency. Band-edge laser modes located on the third 0-point have lower quality factors but higher surface-emission efficiencies. In both cases, the PhC should be designed specifically to avoid coupling with lossy, higher order modes.

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Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design

Cited by 36 publications

References 17 publications

High power asymmetric 980nm broad-waveguide diode lasers with current blocking layer

High power asymmetric 980nm broad-waveguide diode lasers with current blocking layer

Influence of Bonding Temperature and Applied Load on the Bonding Integrity and Optical Performance of Face-Down Bonded Ridge-Waveguide Lasers

Band-edge lasing in gold-clad photonic-crystal membranes

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