Low-loss substrate-removed (SURE) optical waveguides in GaAs-AlGaAs epitaxial layers embedded in organic polymers

Sakamoto, S.R.; Öztürk, Cem; Byun, Young Tae; Ko, J.; Dagli, N.

doi:10.1109/68.681292

Cited by 30 publications

(11 citation statements)

References 5 publications

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“…Transfer bonding is used for the fabrication and integration of the optical transducer arrays on standard CMOS wafers, i.e., uncooled infrared focal plane arrays ͑e.g., bolometer detectors, pyroelectric detectors͒, 13,71,73,147 optical transducer systems ͑e.g., spatial light modulators, tunable vertical coupled surface emitting lasers͒, 13,106,111,214 and imaging systems and laser systems. 37,38,46,103,136,137 Transfer bonding of films and devices is also used to process material films ͑e.g., singlecrystalline silicon, gallium arsenide, etc.͒ on the front-and backside 13,34,46,49,68,71,76 and to transfer high-frequency components to new, low-loss substrates. 15,39,40,42,47,130,131,135,154,209 Figure 15 shows an example for the process flow for fabrication of monocrystalline silicon micromirrors using membrane transfer bonding.…”

Section: B Film and Device Transfer For Integration Of Mems And Elecmentioning

confidence: 99%

“…Polymer adhesives with such characteristics are thermoplastic polymers or solvent-based thermosetting polymers ͑B-stage polymers͒ that are in a solid or gel-like state after the solvents are evaporated. Polymer adhesives that work specifically well for adhesive wafer bonding applications are B-stage polymers ͓e.g., benzocyclobutene ͑BCB͒ and SU8͔ [13][14][15]49,60,66,158 and most thermoplastic adhesives ͓e.g., Polymethylmeth-acrylate ͑PMMA͒, copolymers and waxes͔. 28 …”

Section: Polymer Adhesives For Wafer Bondingmentioning

confidence: 99%

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Adhesive wafer bonding

Niklaus

Stemme

Lü

et al. 2006

Journal of Applied Physics

421

307

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Section: B Film and Device Transfer For Integration Of Mems And Elecmentioning

confidence: 99%

Section: Polymer Adhesives For Wafer Bondingmentioning

confidence: 99%

Adhesive wafer bonding

Niklaus

Stemme

Lü

et al. 2006

Journal of Applied Physics

421

307

View full text Add to dashboard Cite

show abstract

“…An epitaxial layer transfer technique [40], using a UV-curable optical adhesive, is used to flip-bond the patterned semiconductor sample to a transparent sapphire substrate [ Fig. 6(f)].…”

Section: Fabricationmentioning

confidence: 99%

InGaAsP annular Bragg lasers: theory, applications, and modal properties

Scheuer

Green

DeRose

et al. 2005

IEEE J. Select. Topics Quantum Electron.

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Abstract-A novel class of circular resonators, based on a radial defect surrounded by Bragg reflectors, is studied in detail. Simple rules for the design and analysis of such structures are derived using a transfer matrix formalism. Unlike conventional ring resonators, annular Bragg resonators (ABR) are not limited by the total internal reflection condition and can exhibit both large free spectral ranges and low bend losses. The Bragg reflection mechanism enables the confinement of light within a defect consisting of a low refractive index medium (such as air). Strong atom-photon interaction can be achieved in such a structure, making it a promising candidate for sensing and cavity quantum electrodynamics applications. For sensing applications, we show that the ABR structure can possess significantly higher sensitivity when compared to a conventional ring resonator sensor. Lasing action and low threshold levels are demonstrated in ABR lasers at telecommunication wavelengths under pulsed optical pumping at room temperatures. The impact of the intensity and dimensions of the pump spot on the emitted spectrum is studied in detail.

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“…Several SEM images of a typical ABR device at this stage in the fabrication process are shown in Figs To achieve strong out-of-plane optical confinement, the InGaAsP membrane must be clad by low-index material both above and below. An epitaxial layer transfer technique, 12 using UV-curable Norland optical adhesive NOA 73 (n Ϸ 1.56 at = 1.55 m), was adopted to facilitate transfer of the InGaAsP membrane to a transparent sapphire substrate. The optical adhesive was applied to the patterned InGaAsP surface by spin-coating, and the entire sample was flip-bonded to the sapphire substrate.…”

Section: Device Fabricationmentioning

confidence: 99%

Assessment of lithographic process variation effects in InGaAsP annular Bragg resonator lasers

Green

Scheuer

DeRose

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Optical microresonators based on an annular geometry of radial Bragg reflectors have been designed and fabricated by electron-beam lithography, reactive ion etching, and an epitaxial transfer process. Unlike conventional ring resonators that are based on total internal reflection of light, the annular structure described here is designed to support optical modes with very small azimuthal propagation coefficient and correspondingly large free spectral range. The effect of lithographic process variation upon device performance is studied. Laser emission wavelength and threshold optical pump power are found to vary between similar devices given different electron doses during electron-beam lithography. As the resonance wavelength and quality factor of these resonators are very sensitive to environmental changes, these resonators make ideal active light sources that can be integrated into large arrays for gas and liquid sensing applications and are easily interrogated.

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Low-loss substrate-removed (SURE) optical waveguides in GaAs-AlGaAs epitaxial layers embedded in organic polymers

Cited by 30 publications

References 5 publications

Adhesive wafer bonding

Adhesive wafer bonding

InGaAsP annular Bragg lasers: theory, applications, and modal properties

Assessment of lithographic process variation effects in InGaAsP annular Bragg resonator lasers

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