Low-loss shielded through-silicon vias filled with multi-walled carbon nanotube bundle

Abstract

In this paper, the multi-walled carbon nanotube bundle (MWCNTB) based shielded through-silicon via (S-TSV) is proposed and the compact expression for the equivalent conductivity of MWCNTB (MWCNTB) is deduced to calculate the resistance of MWCNTB based S-TSV (MS-TSV). Then, the electrical characteristics including the S parameters, attenuation constant and time delay are investigated. The results indicate that |S 21 | of MS-TSV increases with the increase of the outermost diameter of MWCNT and decrease of the thickness of the shielding layer. Compared with the copper filled S-TSV (CuS-TSV), the MS-TSV has a larger |S 21 |, smaller attenuation and shorter time delay. Finally, the impact of the geometrical parameters on the conductivity of MS-TSV is analyzed. Also, the minimum packing density of MWCNTB satisfying MWCNTB Cu has been deduced. The results show that the outermost diameter of MWCNT has the most significant impact on the conductivity of MS-TSV, and thicker MWCNT is helpful to increase the conductivity of MS-TSV, decrease the packing density of MWCNTB and reduce manufacturing difficulty. Index terms-Forward transmission coefficient, multi-walled carbon nanotube (MWCNT), propagation constant, through-silicon via (TSV), time delay fields. In [3], frequency-and temperature-dependent model and characteristic of circular and square C-TSVs are investigated. In [4], the C-TSV is fabricated and its S parameters are examined and compared with signal-ground paired TSVs. These studies indicate that C-TSV can serve as a low-noise and low-crosstalk structure. Note that the conductor materials of C-TSV in the above reports are the copper, tungsten and

A novel RDL structure of improving high-frequency transmission and reliability of FOWLP

“…It is worth noting that the RDL materials discussed in the aforementioned reports predominantly consist of copper. The performance and reliability of integrated circuits (IC) operating under highfrequency and high-temperature conditions may suffer due to the skin effect and electromigration associated with copper [10]. Fortunately, graphene, characterized by high thermal conductivity and an impressive current-carrying capacity, emerges as the most viable candidate to supplant copper for interconnects in very large-scale integration in the future [11][12][13].…”

Wideband transmission optimization for heterogenous interconnection in 3D IC

“…However, the noise coupling and signal integrity problems in 3D high density transmissions bring extra insert losses [13,14,15,16,17,18]. Different methods are proposed to improve the transmissions performance of redistribution layer (RDL) and TSV, such as meta surface technology [19], via bottom cleaning [20], TSV defect tolerance [21], siliconcore coaxial TSV [22], quasi-coaxial TSV [23,24], PN junction and shielding TSV [25,26], differential channel [27], inductive impedance optimization [28].…”

A Modified Interposer Fabrication Process by Copper Nano-Pillars Filled in Anodic Aluminum Oxide Film for 3D Electronic Package

“…Though silicon with through silicon vias (TSVs) has served as the interposer in 3D ICs for many years [4][5][6], it is far from popular in the industry because of its high cost during the fabrication process which involves deep reactive ion etching (DRIE), chemical vapor deposition (CVD), physical vapor deposition (PVD), etc. [7].…”