Low-Loss Microcoax-to-CPW Transition for Air-gapped Microcoaxial Passives

Tian, Ye; Meng, Qianqian; Lee, Kok-Yan; Wang, Wanjun

doi:10.1109/lmwc.2015.2451359

Cited by 7 publications

(3 citation statements)

References 11 publications

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“…It should be noted that the general CPW interface [3–7] enables single‐angle measurements while the proposed RMCL to GSG probe pad transition offers the capability of multi‐angle measurements, as shown in Figure 10, which facilitates on‐chip measurement of multi‐port micro‐coaxial devices and avoids multiple repetitive probe angle adjustments. This design allows for on‐chip measurement of multi‐port micro‐coaxial devices, eliminating the need for repetitive adjustments of probe angles.…”

Section: Fabrication and Discussionmentioning

confidence: 99%

“…Similarly, Ref. [6] presented a new RMCL-CPW transition, which exhibited good performance at DC-40 GHz, but with complexity and limited operating frequency. A simpler 5-layer process-based RMCL-CPW transition was demonstrated in Ref.…”

Section: Introductionmentioning

confidence: 99%

“…But the transitions mentioned above [3][4][5][6][7][8] focus on the frequency range below 110 GHz. As modern chips move towards broadband operation, the upper limit of their operating frequency increases, necessitating the design of wider band transitions for on-chip measurement.…”

Section: Introductionmentioning

confidence: 99%

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A non‐50 Ω‐RMCL transition designed for on‐chip measurement in the 0–170 GHz frequency range

Yuan,

Sun,

Tang

et al. 2023

IET Microwaves Antenna & Prop

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The authors present the design of a rectangular micro‐coaxial line (RMCL) to ground‐to‐ground (GSG) probe pad transition for broadband millimetre‐wave (mmW) probe testing. The proposed transition is designed to effectively operate across the frequency range from DC to 170 GHz, providing the capability to convert non‐50 Ω RMCL ports to 50 Ω GSG ports. To validate the design methodology, the back‐to‐back model of the transition is fabricated and experimentally characterised. The fabricated transition exhibits a remarkable return loss exceeding 18 dB, along with an insertion loss below 0.4 dB within the frequency span of 0–75 GHz. With this transition, on‐chip measurement of non‐50 Ω ultra‐wideband millimetre‐wave chips becomes feasible.

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Section: Fabrication and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%