Low loss IGBT with Partially Narrow Mesa Structure (PNM-IGBT)

Sumitomo, M.; Asai, Junichi; Sakane, Hiroyuki; Arakawa, Kazuki; Higuchi, Yasushi; Matsui, Masaki

doi:10.1109/ispsd.2012.6229012

Cited by 96 publications

(54 citation statements)

References 3 publications

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“…To verify the applicability of the developed model, a specific modified IGBT structure, developed to improve the driving capability, which is called Partially-Narrow-Mesa IGBT (PNM-IGBT) [33], [34], is investigated. The specific feature of this PNM-IGBT is a longer extended bottom-gate length, as shown in Fig.…”

Section: Model Verification and Discussionmentioning

confidence: 99%

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Miyaoku

Tone

Matsuura

et al. 2020

IEEE J. Electron Devices Soc.

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The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as for power-supply systems. In the reported investigation, the accurate prediction of the power dissipation of IGBT circuits has been analyzed. The main focus is given on the carrier dynamics within the IGBTs during the switching-off phase. It is demonstrated that discharging and charging at the IGBT's gate-bottom-overlap region, where electron discharging is followed by hole charging, has an important influence on the switching performance. In particular, the comparison of long-base and short-base IGBTs reveals, that a quicker formation of the neutral region within the resistive base region, as occurring in the long-base IGBT, leads to lower gatebottom-overlap capacitance, thus realizing faster electron discharging and hole charging of this overlap region.

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Section: Model Verification and Discussionmentioning

confidence: 99%

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Miyaoku

Tone

Matsuura

et al. 2020

IEEE J. Electron Devices Soc.

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“…It is quite natural that an extremely fine cell pitch, which is currently referred to as 'narrow mesa' type structure [25][26][27], has an advantage on better V CEsat . At the same time, the narrow mesa structure has a disadvantage on worse E off and/or SCSOA without some special gate assistance [28] otherwise a wider cell pitch and a special cell geometry [29,30].…”

Section: Improving Fundamental Trade-offmentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

IET Power Electronics

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From the power loss reduction and safety operation points of view, the direction of power device developments is simply one-way. However, from the application point of view, the direction is wide-ranging. There are a variety of requirements to be considered, such as switching waveforms, operational environments including not only the temperature range but also the combination of the humidity, the cosmic ray endurance, the package compactness and so on. In this study, several efforts are explained as the latest technologies.

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“…2 shows the specific ON-resistance of various SiC switches in comparison with modern silicon devices. Of course, this is a simplified view as the devices [14,20,[24][25][26][27][28][29][30][31][32][33][34][35] NB: For the bipolar devices R ON A was calculated as the voltage drop at a nominal current density divided by the nominal current density For the references other than the indicated see [3] www.ietdl.org…”

Section: Conclusion On Sic-switchesmentioning

confidence: 99%

SiC and GaN devices – wide bandgap is not all the same

Kaminski

Hilt

2014

IET Circuits, Devices & Systems

114

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Silicon carbide (SiC)-diodes have been commercially available since 2001 and various SiC-switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power electronics and the first low-voltage devices are already on the market. Currently, it seems that GaN-transistors are ideal for high frequency ICs up to 1kV (maybe 2kV) and maximum a few 10A. SiC transistors are better suited for discrete devices or modules blocking 1kV and above and virtually no limit in the current but in that range they will face strong competition from the silicon insulated gate bipolar transistors (IGBTs). SiC and GaN Schottky-diodes would offer a similar performance, hence here it becomes apparent that material cost and quality will finally decide the commercial success of wide bandgap devices. Bulk GaN is still prohibitively expensive, whereas GaN on silicon would offer an unrivalled cost advantage. Devices made from the latter could be even cheaper than silicon devices. However, packaging is already a limiting factor for silicon devices even more so in exploiting the advantage of wide bandgap materials with respect to switching speed and high temperature operation. After all, reliability is a must for any device no matter which material it is made of.

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Low loss IGBT with Partially Narrow Mesa Structure (PNM-IGBT)

Cited by 96 publications

References 3 publications

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

SiC and GaN devices – wide bandgap is not all the same

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