Low-level leakage currents in thin silicon oxide films

Dumin, D.J.; Cooper, J.R.; Maddux, Jay R.; Scott, Ron; Wong, Deniz

doi:10.1063/1.357147

Cited by 42 publications

(6 citation statements)

References 24 publications

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“…continue to shrink to achieve higher packing density and higher performance. However, the dimensions of memory will finally reach their physical limit, where charge leakage occurs when the Si layer is below a certain thickness, which degrades the retention performance [3,4]. In addition, the operation speed remains a bottleneck in the current memory industry.…”

Section: Future Perspectivesmentioning

confidence: 99%

Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS₂-channel transistor

Liu¹,

Sun²,

Huang³

et al. 2022

Mater. Futures

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Flash memory with high operation speed and stable retention performance is in great demand to meet the requirements of big data. In addition, the realisation of ultrafast flash memory with novel functions offers a means of combining heterogeneous components into a homogeneous device without considering impedance matching. This report proposes a 20 ns programme flash memory with 108 self-rectifying ratios based on a 0.65-nm-thick MoS2-channel transistor. A high-quality van der Waals heterojunction with a sharp interface is formed between the Cr/Au metal floating layer and h-BN tunnelling layer. In addition, the large rectification ratio and low ideality factor (n = 1.13) facilitate the application of the MoS2-channel flash memory as a bit-line select transistor. Finally, owing to the ultralow MoS2/h-BN heterojunction capacitance (50 fF), the memory device exhibits superior performance as a high-frequency (up to 1 MHz) sine signal rectifier. These results pave the way toward the potential utilisation of multifunctional memory devices in ultrafast two-dimensional NAND-flash applications.

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Section: Future Perspectivesmentioning

confidence: 99%

Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS₂-channel transistor

Liu¹,

Sun²,

Huang³

et al. 2022

Mater. Futures

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“…Manuscript submitted June 15, 1994; revised manuscript received Sept. 12, 1994. This was Paper 121 presented at the San Francisco, CA, Meeting of the Society, May 22-27, 1994.…”

Section: Acknowledgmentsmentioning

confidence: 99%

Traps in Reoxidized Nitrided Oxides of Varying Thicknesses

Natarajan¹,

Dumin²

1995

J. Electrochem. Soc.

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A study was conducted on the reliability aspects of thin reoxidized nitrided oxides (ROXNOX), as an alternative gate dielectric to thermal silicon dioxide in submicron metal oxide semiconductor (MOS) devices. MOS capacitors, with ROXNOX gate oxides of thicknesses ranging from 7 to i0 nm, were subjected to constant voltage stressing. The density and distribution of the traps inside of the insulator were determined before and after high field stressing. The ROXNOX exhibited a high initial trap density in contrast to the normally low initial trap density in oxides. The trap generation rate, after stressing, was considerably lower than that measured in thermal oxides. The low-level leakage currents were higher in the ROXNOX than in thermal oxides, and their voltage and fluence dependences after stressing were different. Leakage currents under low fields in unstressed ROXNOX were composed of a transient component and an ohmic dc component. The dc resistivity of the ROXNOX increased as the thickness increased. A model was proposed to explain the mechanism of low field conduction in the ROXNOX.

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“…There are a low density of weak bonds and, even though the density of strong bonds is high, it takes more energy to break these bonds and, thus, the trap generation rate drops as the stress continues. Several techniques have been developed for measuring the bulk oxide trap densities inside the oxide during or following voltage stressing [327,333,531,634]. A convenient technique is based on the tunnel charge/discharge of the stress generated traps [13,39,327,461,466,502,688,689].…”

Section: Si -O -Simentioning

confidence: 99%

Oxide Wearout, Breakdown, and Reliability

Dumin

2001

Int. J. Hi. Spe. Ele. Syst.

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The subject of oxide wearout, breakdown, and reliability will be reviewed, largely, from an historical perspective. Five topics will be discussed: oxide breakdown, oxide leakage currents, trap generation, statistics, and reliability. An early model of oxide breakdown, developed by Klein and Solomon, will be described and will be shown to be generally applicable to oxides manufactured today, and to other solid insulators, as well. Both hard and soft breakdowns were included in this model and will be discussed here. The importance of stressinduced-leakage-currents (SILCs) and direct tunneling currents will be discussed in the context of device applications, thinner oxides, and oxide reliability. The diminishing importance of breakdown in ultra thin oxides in ultra small devices will be contrasted with the increasing importance of oxide leakage currents. Trap generation is important in the triggering of breakdown and in the formation of SILCs. Trap generation will be discussed in some detail. Various statistical formulations of oxide breakdown, and how these distributions are related to trap generation, will be discussed. All of these effects will be related to oxide reliability and oxide integrity. An extensive bibliography has been included to help the reader obtain more detailed information concerning the concepts being discussed. Int. J. Hi. Spe. Ele. Syst. 2001.11:617-718. Downloaded from www.worldscientific.com by UNIVERSITY OF VIRGINIA on 04/10/15. For personal use only. Int. J. Hi. Spe. Ele. Syst. 2001.11:617-718. Downloaded from www.worldscientific.com by UNIVERSITY OF VIRGINIA on 04/10/15. For personal use only. Oxide Wearout, Breakdown, and Reliability 619found in an early review paper [20]. This wearout/breakdown model will be referred to as the "Klein/Solomon" model below when comparisons with modern works are needed.The Klein/Solomon model has been refined and confirmed continuously from the 1970s through the present time [10,20,. The extent of the damage is determined both by the 1/2 CV 2 energy stored in the capacitor and by the rate at which this energy discharges through the local hot spot [10,20,75,82,83,88,92,93,96,[100][101][102]. The local hot spot is often accompanied by light emission, in many cases incandescence [8-10, 103-115]. Several techniques have been developed for using the damage introduced during the breakdown to study the breakdown process [80,[116][117][118][119][120][121][122][123][124]. During the breakdown event, the stored energy in the capacitor, 1/2 CV 2 , partially discharges through the breakdown region in a time limited by the impedance of the total measurement system [8][9][10][82][83][84][85].The local breakdowns are intimately coupled to the trap generation and various trap generation models will be discussed in a separate section.During the breakdowns described by Klein/Solomon, one of two scenarios is possible during and following a breakdown discharge. Which scenario takes place depends on the oxide thickness, the oxide area, the magnitude of the stored energy, the ...

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Low-level leakage currents in thin silicon oxide films

Cited by 42 publications

References 24 publications

Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS₂-channel transistor

Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS₂-channel transistor

Traps in Reoxidized Nitrided Oxides of Varying Thicknesses

Oxide Wearout, Breakdown, and Reliability

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Low-level leakage currents in thin silicon oxide films

Cited by 42 publications

References 24 publications

Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS2-channel transistor

Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS2-channel transistor

Traps in Reoxidized Nitrided Oxides of Varying Thicknesses

Oxide Wearout, Breakdown, and Reliability

Contact Info

Product

Resources

About

Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS₂-channel transistor

Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS₂-channel transistor