Low LET cross-section measurements using high energy carbon beam [DRAMs/SRAMs]

Single-event upsets (SEU) in microelectronics are calculated from newly-developed silicon nuclear reaction recoil data for incident protons and neutrons with energies up to 150 MeV. This paper focusses on the nuclear reaction physics that is important for calculating recoil spectra, and burst generation rate spectra. Comparisons are made with previous results, obtained from intranuclear cascade calculations as well as from previous ENDF data below 20 MeV, to demonstrate new features in the present calculations. Calculated SEU cross sections are compared with measured data.

Section: V Application Of the La150 Bgr Datamentioning

confidence: 69%

Use of new ENDF/B-VI proton and neutron cross sections for single event upset calculations

Chadwick

Normand²

1999

“…As in [4], a gradual decrease in cross-section with decreasing LET was observed. A Geant4 based simulation tool, developed by this group [8]- [11], was used to investigate direct ionization and nuclear reaction events occurring in both the sensitive volume and in the interconnect and passivation layers.…”

Section: Introductionmentioning

confidence: 80%

“…Some of the first indicators that nuclear reactions contribute to heavy ion cross-sections were seen in commercial memories evaluated with C beams having low LET [4]. At LET below 1 MeV-cm /mg, the SEU cross-sections were less than cm /bit.…”

Section: Introductionmentioning

confidence: 99%

The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

Warren¹,

Weller

Mendenhall

et al. 2005

148

“…With few exceptions, such ion energies are not available in ground-based test facilities, and concerns about the fidelity of accelerator tests for simulating the response of integrated circuits (ICs) in the real space radiation environment have resulted [2]. Previous studies in the literature have sometimes shown differences in single-event upset (SEU) response with ion energy [3]- [5], and in other cases have not [6]- [8].…”

Section: Impact Of Heavy Ion Energy and Nuclearmentioning

confidence: 92%

Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

Dodd

Schwank

Shaneyfelt

et al. 2007

106

The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced upsets, little difference is observed in single-event upset and latchup cross sections measured using low versus high energy heavy ions. However, significant differences between lowand high-energy heavy ion test results are observed below the threshold LET for single-node direct ionization-induced upsets. The data suggest that secondary particles produced by nuclear interactions play a role in determining the SEU and SEL hardness of integrated circuits, especially at low LET. The role of nuclear interactions and implications for radiation hardness assurance and rate prediction are discussed.