Low leakage stoichiometric SrTiO₃ dielectric for advanced metal–insulator–metal capacitors

Abstract

Metal–insulator–metal capacitors (MIMCAP) with stoichiometric SrTiO3 dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr‐rich STO seed layer, with the Ti‐rich STO top layer. The resulted stoichiometric SrTiO3 would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr‐rich STO which allow further equivalent oxide thickness downscaling. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

Electronic voltage control of magnetic anisotropy at room temperature in high- κ SrTiO3/Co/Pt trilayer

“…High-κ dielectrics like SrTiO 3 can nowadays be grown on a large scale using atomic layer deposition (ALD). ALD growth is compatible with modern electronics applications, and it allows to grow STO with good (110) surface crystallinity [29,30], low leakage currents [30], and a dielectric constant up to 80 [29].…”

Effect of Growth Temperature during the Atomic Layer Deposition of the SrTiO3 Seed Layer on the Properties of RuO2/SrTiO3/Ru Capacitors for Dynamic Random Access Memory Applications

“…SrTiO 3 (STO) thin films have been studied for about two decades as one of the promising candidates for the next-generation dielectric of the dynamic random access memory (DRAM) capacitors. − With the aid of the atomic layer deposition (ALD) technique, dielectric films with a permittivity of over 100 can be obtained in a three-dimensional structure, which can mitigate the charge loss problem of aggressively shrunken DRAM capacitors. − Leskelä’s group first accomplished the ALD growth of STO films with a permittivity of 100. , Thereafter; several other groups joined this research field with various strategies, such as intermixing Sr- and Ti-rich STO or film growth with the aid of plasma energy. ,− The authors’ group has also focused on the thermal ALD and performance improvement of the STO films since 2005. ,,,,− Thermal ALD is a preferred method for growing such dielectric films over the plasma-based processes because of its almost unlimited capability to grow a conformal film in a severely three-dimensional structure. The DRAM capacitor node, whose minimum lateral dimension is as small as 20 nm and whose height is ∼1000 nm, is an example structure, making the aspect ratio as high as ∼50.…”

Reliable high work-function molybdenum dioxide synthesis via template-effect-utilizing atomic layer deposition for next-generation electrode applications

“…7 Furthermore, the crystal structural coherency between the insulator and electrode strongly influences the insulator crystallinity and, in turn, governs the insulator dielectric constant. [8][9][10][11] For decades, TiN has been employed as a DRAM capacitor electrode because the crystallinity of TiN is coherent with ZrO 2 4,12 and it has a facile deposition process. 13,14 However, TiN exhibits a relatively low work function (4.2 eV) 15 and inadequate crystallinity when combined with higher-k dielectrics such as TiO 2 and SrTiO 3 , 16,17 limiting its application to next-generation DRAM devices.…”