Low-K/Cu CMOS logic based SoC technology for 10 Gb transceiver with 115 GHz f/sub T/, 80 GHz f/sub MAX/ RF CMOS, high-Q MiM capacitor and spiral Cu inductor

Low-K/Cu CMOS-Based SoC Technology With 115-GHz<tex>$f_T$</tex>, 100-GHz<tex>$f_max$</tex>, Low Noise 80-nm RF CMOS, High-Q MiM Capacitor, and Spiral Cu Inductor

“…Table V indicates the benchmark done between this work using 0.13-m LV technology [3] and others adopting 90-nm technologies [4]- [7]. All technologies deploy a Cu process in the BEOL to achieve the desired logic speed and improve RF passive performance simultaneously.…”

“…Besides the regular transistor speed increase [3]- [8], the growing number of interconnect layers allows the realization of on-chip inductors and capacitors with higher Q [2]- [11]. In this paper, we will report a promising practice targeted on a 10-Gb transceiver, which is supported by 0.13-m low-K/Cu logic CMOS-based RF technology with 80-nm RF NMOS of 115-GHz and sub-1.0-dB NF at 10 GHz integrated with a high Q metal-insulator-metal (MiM) capacitor GHz and spiral Cu inductor GHz in the same chip.…”