Low-frequency noise measurement and analysis in organic light-emitting diodes

Correlation analysis of electrical and optical low frequency fluctuation in organic device degradation

“…Such increase in the noise PSD gradient was explained by the tunneling model, a direct application of McWhorter's potential fluctuation mechanism, based on which Song et al 7 suggested that abundant device defects would lead to fluctuation in the number of charge carrier, which would, in turn, be manifested in the high slope of 1 / f noise. Furthermore, the experimental observation on the noise gradient was in line with some of the previous studies on low frequencies noise in OLED where Ke et al 4,5 reported that formation of dark spots ͑a sign of device degradation͒ was primarily correlated with current 1 / f noise slope.…”

“…Following that, recent literatures attempt to establish a correlation between current 1 / f noise and device degradation. 4,6 Ke et al 5 showed that the slope of current 1 / f noise is correlated with the formation of dark spots ͑a sign of device degradation͒ and quality of the device interface, whereas the noise magnitude indicates the bulk quality. 6 It had also been illustrated that it is possible to estimate a device lifetime from the slope of 1 / f noise.…”

“…6 It had also been illustrated that it is possible to estimate a device lifetime from the slope of 1 / f noise. 4 As the 1 / f noise had proven to possess a strong connection with device degradation, it would be interesting to look into how the various 1 / f noise components correlate with each other in a device so as to use this correlative behavior as a basis for device lifetime prediction. Therefore, the paper aims to examine the correlation between the electrical and optical 1 / f noise during device degradation so as to provide another perspective on noise analysis technique for lifetime measurement.…”

A Brief Review on Flexible Electronics for IoT: Solutions for Sustainability and New Perspectives for Designers

“…In this regard, the technique of low-frequency noise measurements could be strategic [257]. This technique, long established for the characterization of conventional electronic devices, being highly sensitive and non-destructive, now finds application for the study of sensors, 2D materials [257], organic materials [258][259][260][261][262][263] and could therefore be used for the characterization of new flexible devices, in addition to conventional electrical characterization methods, such as current-voltage, impedance, dielectric. While usually the reliability of electronic devices is verified by electrical characterization, even under conditions of accelerated stress to obtain their lifetime, now it is also essential to carry out a mechanical characterization.…”

A novel approach to investigate bulk carrier lifetime using low frequency fluctuation noise measurement

“…The easier low cost measurement, which can be done possibly without light source might be favorable. In this case, low frequency noise measurement is a suitable technique for characterizing solid-state solar cells [24][25][26][27][28]. In this paper, we propose an approach to evaluate the carrier lifetime through the inference from low frequency noise fluctuations.…”