Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation

Takakura, Kenichiro; Putcha, Vamsi; Simoen, Eddy; Alian, A.; Peralagu, Uthayasankaran; Waldron, Niamh; Parvais, B.; Collaert, N.

doi:10.1109/ted.2020.3002732

Cited by 26 publications

(22 citation statements)

References 48 publications

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“…We are aware of only one study of noise in high-k Si MOSFET that reported a very small trap density of N t 10 17 eV −1 cm −3 [31]. Other studies of noise in AlGaN/GaN HEMTs with metal gate indicated N t = (10 18 -10 20 ) eV −1 cm −3 (see Figure 7b and References [23][24][25]32]). We also found a similar range of effective trap density N t = (2.3 × 10 19 -1.7 × 10 20 ) eV −1 cm −3 in AlGaN/GaN HEMT structures with Ni/Au gate.…”

Section: Resultsmentioning

confidence: 95%

“…where gm is the external transconductance, q is the electron charge, and C is the gate capacitance per unit area. This method allows us to get rid of the uncertainty of the threshold voltage and take into account the possible influence of the contact resistance [23]. In the McWhorter model, the spectral noise density of the drain current fluctuations S I /I 2 in the linear regime is given by [22]:…”

Section: Resultsmentioning

confidence: 99%

“…where g m is the external transconductance, q is the electron charge, and C is the gate capacitance per unit area. This method allows us to get rid of the uncertainty of the threshold voltage and take into account the possible influence of the contact resistance [23]. Figure 7b compares the effective trap density as a function of the gate voltage swing extracted using Equation (4) for the same transistors as in Figure 7a.…”

Section: Resultsmentioning

confidence: 99%

“…In Si MOSFETs, the γ value is usually taken to be γ = 10 8 cm −1 . For the AlGaN/GaN system, the attenuation coefficient is somewhat smaller: γ ≅ 0.45 × 10 8 cm −1 [ 23 ].…”

Section: Resultsmentioning

confidence: 99%

“…The effective trap density can be also found from the input gate voltage noise

where g m is the external transconductance, q is the electron charge, and C is the gate capacitance per unit area. This method allows us to get rid of the uncertainty of the threshold voltage and take into account the possible influence of the contact resistance [ 23 ].…”

Section: Resultsmentioning

confidence: 99%

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Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

et al. 2020

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Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were found to be relatively high, varying within the range of φb = (1.0–1.26) eV. AlGaN/GaN fin-shaped field-effect transistors (finFETs) with a graphene gate were fabricated and studied. These devices demonstrated ~8 order of magnitude on/off ratio, subthreshold slope of ~1.3, and low subthreshold current in the sub-picoamperes range. The effective trap density responsible for the 1/f low-frequency noise was found within the range of (1–5) · 1019 eV−1 cm−3. These values are of the same order of magnitude as reported earlier and in AlGaN/GaN transistors with Ni/Au Schottky gate studied as a reference in the current study. A good quality of graphene/AlGaN Schottky barrier diodes and AlGaN/GaN transistors opens the way for transparent GaN-based electronics and GaN-based devices exploring vertical electron transport in graphene.

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Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

“…where g m is the external transconductance, q is the electron charge, and C is the gate capacitance per unit area. This method allows us to get rid of the uncertainty of the threshold voltage and take into account the possible influence of the contact resistance [23]. Figure 7b compares the effective trap density as a function of the gate voltage swing extracted using Equation (4) for the same transistors as in Figure 7a.…”

Section: Resultsmentioning

confidence: 99%

“…In Si MOSFETs, the γ value is usually taken to be γ = 10 8 cm −1 . For the AlGaN/GaN system, the attenuation coefficient is somewhat smaller: γ ≅ 0.45 × 10 8 cm −1 [ 23 ].…”

Section: Resultsmentioning

confidence: 99%

“…The effective trap density can be also found from the input gate voltage noise

Section: Resultsmentioning

confidence: 99%

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Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

et al. 2020

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Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

Hsu

Simoen

Liang

et al. 2021

Physica Status Solidi (a)

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To investigate the defects from the gate regrowth process, samples with and without regrowth p‐GaN process are fabricated by metalorganic chemical vapor deposition (MOCVD). The DC characteristics indicate larger gate leakage (Igs) between the GaN channel and the p‐GaN gate in the regrowth sample than in the nonregrowth counterpart. In addition, significant Si/O impurities are introduced by the regrowth process at the interface between channel and regrown AlGaN barrier. The low‐frequency noise (LFN) measurement and deep‐level transient spectroscopy (DLTS) are further carried out to investigate the defectivity at the AlGaN barrier and channel interface, giving a 2–3 times higher border trap density in the AlGaN barrier (depth ≈5 nm from the channel interface) and a 10 times increase in interface trap density at the channel interface, corresponding with a band of shallow levels E3 = Ec–0.02–0.15 eV. Three additional bulk traps E2/E5 (Ec–0.8 eV, σn=5×10−15 cm2 / Ec–0.17 eV, σn=5×10−22 cm2) and E4 (Ec–0.23 eV, σn=5×10−19 cm2) are also found in the regrowth and nonregrowth samples, respectively. Their possible spatial locations and origins are discussed.

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Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications

Dastidar

Patra

2022

Lecture Notes in Electrical Engineering

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Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation

Cited by 26 publications

References 48 publications

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications

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