Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications

Dastidar, Ananya; Patra, Tapas Kumar

doi:10.1007/978-981-19-2308-1_19

Lecture Notes in Electrical Engineering

2022

DOI: 10.1007/978-981-19-2308-1_19

|View full text |Cite

Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications

Ananya Dastidar

Tapas Kumar Patra

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite1

Independent0

Authors

Journals

Cited by 1 publication

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Sensitivity estimation of biosensor in a tapered cavity MOSHEMT

Dastidar,

Patra,

Mohapatra

et al. 2024

Phys. Scr.

Self Cite

View full text Add to dashboard Cite

The present research provides a comprehensive investigation of the structural modification at the cavity under the gate (CUG) on the metal oxide semiconductor high electron mobility transistor (MOSHEMT)-based biosensor by projecting its basic figures of merit (FOMs). The effect of a tapering dielectric on the sensitivity of the biosensor has not been extensively investigated in many research efforts. Therefore, to account for the larger binding surface, the current study considers a wide range of permittivity of the biomolecules from 1 to 10, using the dielectric modulation technique in the tapered cavity. Various cavities are analysed to enhance the sensitivity. The findings indicate that the presence of biomolecules causes a considerable fluctuation in the drain current, threshold voltage, on-current, off-current, channel potential, and oxide capacitance. It has also been estimated how various fill percentages and charged and neutral biomolecules affect the device's sensitivity. The tapered dielectric MOSHEMT offered an on-current sensitivity and threshold voltage sensitivity of 1.25 and 0.889 for neutral biomolecule (k = 8) and 0.562 and 2.23 for positively charged biomolecule respectively. Thus, tapering of the oxide does offer better sensitivities that can be exploited for biosensing applications.

show abstract

Sensitivity estimation of biosensor in a tapered cavity MOSHEMT

Dastidar,

Patra,

Mohapatra

et al. 2024

Phys. Scr.

Self Cite

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications

Cited by 1 publication

References 38 publications

Sensitivity estimation of biosensor in a tapered cavity MOSHEMT

Sensitivity estimation of biosensor in a tapered cavity MOSHEMT

Contact Info

Product

Resources

About