Low-frequency noise in thick-film resistors due to two-step tunneling process in insulator layer of elemental MIM cell

Noise and structural properties of reactively sputtered RuO2 thin films

“…Generally, the elemental cell of thick-film resistor is described as a cell formed by two sintered conducting particles or particles separated by a thin insulating layer forming metal-insulator-metal structure. 1 / f noise sources in such a structure may be sintered contacts, described by the empirical relation (3), or charge fluctuation in insulating layers modulating barrier resistances, thus modulating tunneling currents [29,30]. The results and analysis given in this paper show that the low frequency noise models, which explain the noise in the RuO 2 thick films, are not directly applicable on the noise in the RuO 2 thin films.…”

Thick‐Film Resistor Failure Analysis Based on Low‐Frequency Noise Measurements

“…In that case, the relative voltage noise spectrum due to the presence of traps in glass barriers is given by the following expression [6,7]:…”

Computer Simulation of Thick-Film Resistors Based on 3D Planar RRN Model

“…Model of the 3D planar random resistor network (RRN) was developed based on two models: deterministic, that was used in our previous papers [1], [2], and site percolation model with double percolation. From the deterministic model the following assumption was taken: charge transport in thick-film resistors takes place via chains of conducting particles.…”

“…Spatial distribution is significant because it determines types of conduction mechanisms and basic characteristic of resistive layers. In our previous papers we have used deterministic model in order to describe structure of thickfilm resistors [1], [2]. Research results have shown validity of the assumption that, conducting phase tends to form chains of conducting particles and that during the sintering process between some of the neighboring conducting particles isolating areas are formed while others remain in contact.…”